PHOTOILLUMINATION EFFECT ON SILICON FIELD ION MICROSCOPY.

Toshio Sakurai, R. J. Culbertson, A. J. Melmed

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The photoillumination effect which occurs during the field ion microscopy of silicon is investigated in detail using an UHV magnetic-sector atom-probe field ion microscope equipped with a retarding potential energy analyzer. It is shown that the observed enhancement of image intensity and field evaporation rate which occurs upon illumination with red light is due to the presence of an oxide layer. Measurements of energy deficits indicate that (1) the oxide layer causes a large potential drop at the emitter cap and (2) red light illumination drastically reduces or completely eliminates the reduction in potential.

    Original languageEnglish
    Pages (from-to)626-628
    Number of pages3
    JournalJournal of vacuum science & technology
    Volume16
    Issue number2
    DOIs
    Publication statusPublished - 1979 Mar

    ASJC Scopus subject areas

    • Engineering(all)

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