In situ photoemission (UPS and XPS) measurements have been performed for amorphous GeTe and GeSe films deposited onto a cooled substrate during thermal annealing and crystallization of the films. It has been found that an amorphous film prepared at room temperature has a 4-2 coordinated local structure while a highly disordered film deposited onto a 77 K substrate is largely 3-3 coordinated and relaxes into the 4-2 coordinated structure upon thermal annealing.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry