Photoemission study of the metal deposition on the (NH4)2Sx-treated GaAs(100) surface at room temperature

Daisei Shoji, Masanori Shinohara, Yusuke Kondo, Michio Niwano, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

Abstract

We have used synchrotron radiation photoemission spectroscopy to investigate the chemical interactions and atomic intermixing at metal/GaAs interfaces during deposition of Au and In onto GaAs(100) surfaces that are chemically treated in (NH4)2Sx and in H2SO4. For the Au deposition onto the (NH4)2Sx-treated surface, alloy formation and metal segregation at interfacial regions are significantly suppressed as compared to the Au deposition onto the H2SO4-treated surface. On the other hand, for In deposition, the In adatoms strongly interact with the (NH4)2Sx-treated surface to generate a thin layer of InxGa1-xAs alloy on which the In overlayer is formed in a layer-by-layer fashion. We found that Au reacts with the H2SO4-treated surface to generate AuGa alloy, but In does not interact appreciably with the surface, leading to the island growth of the In overlayer.

Original languageEnglish
Pages (from-to)315-320
Number of pages6
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume101-103
DOIs
Publication statusPublished - 1999

Keywords

  • (NH)S treatment
  • GaAs(100) surface
  • Interface
  • Metal deposition
  • Photoemission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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