TY - JOUR
T1 - Photoemission study of synchrotron radiation induced reactions of TEOS adsorbed on silicon surface
AU - Niwano, Michio
AU - Miyamoto, Nubuo
AU - Simons, John K.
AU - Frigo, Sean P.
AU - Rosenberg, Richard A.
N1 - Funding Information:
These experiments were performed at the Synchrotron Radiation Center which is supported by the US National Science Foundation under Grant No. DMR92-12658. The excellent support of the staff of the Synchrotron Radiation Center is gratefully acknowledged. One of the authors (M.N.) was financially supported, in part, by the Japan Society for the Promotion of Science. Part of this work also was supported by a Grant-in-Aid for General Project Research from the Ministry of Education, Science and Culture of Japan.
PY - 1994/5/2
Y1 - 1994/5/2
N2 - We have investigated the synchrotron radiation (SR) induced chemical reactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si, using photoemission spectroscopy. TEOS adsorbs on the Si surface with its molecular structure intact, at least below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon oxide like film, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the addition of water enhances the removal of carbon contamination in the oxide film.
AB - We have investigated the synchrotron radiation (SR) induced chemical reactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si, using photoemission spectroscopy. TEOS adsorbs on the Si surface with its molecular structure intact, at least below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon oxide like film, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the addition of water enhances the removal of carbon contamination in the oxide film.
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U2 - 10.1016/0169-4332(94)90445-6
DO - 10.1016/0169-4332(94)90445-6
M3 - Article
AN - SCOPUS:0028761016
VL - 79-80
SP - 403
EP - 408
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - C
ER -