Photoemission study of synchrotron radiation induced reactions of TEOS adsorbed on silicon surface

Michio Niwano; Nubuo Miyamoto; John K. Simons; Sean P. Frigo; Richard A. Rosenberg

doi:10.1016/0169-4332(94)90445-6

Photoemission study of synchrotron radiation induced reactions of TEOS adsorbed on silicon surface

Michio Niwano, Nubuo Miyamoto, John K. Simons, Sean P. Frigo, Richard A. Rosenberg

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Abstract

We have investigated the synchrotron radiation (SR) induced chemical reactions of tetraethoxysilane Si(OC₂H₅)₄ (TEOS) adsorbed on Si, using photoemission spectroscopy. TEOS adsorbs on the Si surface with its molecular structure intact, at least below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon oxide like film, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the addition of water enhances the removal of carbon contamination in the oxide film.

Original language	English
Pages (from-to)	403-408
Number of pages	6
Journal	Applied Surface Science
Volume	79-80
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(94)90445-6
Publication status	Published - 1994 May 2

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "We have investigated the synchrotron radiation (SR) induced chemical reactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si, using photoemission spectroscopy. TEOS adsorbs on the Si surface with its molecular structure intact, at least below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon oxide like film, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the addition of water enhances the removal of carbon contamination in the oxide film.",

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AU - Niwano, Michio

AU - Miyamoto, Nubuo

AU - Simons, John K.

AU - Frigo, Sean P.

AU - Rosenberg, Richard A.

PY - 1994/5/2

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AB - We have investigated the synchrotron radiation (SR) induced chemical reactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si, using photoemission spectroscopy. TEOS adsorbs on the Si surface with its molecular structure intact, at least below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon oxide like film, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the addition of water enhances the removal of carbon contamination in the oxide film.

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