Photoemission study of metal deposition on sulfur-treated GaAs(100)

Daisei Shoji; Taka aki Miura; Michio Niwano; Nobuo Miyamoto

doi:10.1016/S0169-4332(98)00098-1

Photoemission study of metal deposition on sulfur-treated GaAs(100)

Daisei Shoji, Taka aki Miura, Michio Niwano, Nobuo Miyamoto

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Abstract

The chemical properties of metal/GaAs interfaces formed by the deposition of metals, Au and Ag, onto the GaAs(100) surfaces treated with H₂SO₄ and (NH₄)₂S_x solutions, have been investigated using synchrotron-radiation photoemission spectroscopy. Photoemission data demonstrate that As atoms are segregated on the metal overlayer during Au and Ag deposition on GaAs surfaces with native oxide, while the As segregation is suppressed on the (NH₄)₂S_x-treated GaAs surface which has no native oxide. In the case of Au deposition, we demonstrate that for low coverages of Au the formation of AgGa alloy is suppressed on the (NH₄)₂S_x-treated surface. The island growth of Ag film and the absence of AgGa alloy during Ag deposition are observed, an indication that no reaction occurs between the Ag and the (NH₄)₂S_x-treated GaAs substrate. We suggest that the removal of native oxide and sulfur-termination are crucial to the passivation of metal/GaAs interfaces.

Original language	English
Pages (from-to)	441-446
Number of pages	6
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00098-1
Publication status	Published - 1998
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Photoemission study of metal deposition on sulfur-treated GaAs(100)",

abstract = "The chemical properties of metal/GaAs interfaces formed by the deposition of metals, Au and Ag, onto the GaAs(100) surfaces treated with H2SO4 and (NH4)2Sx solutions, have been investigated using synchrotron-radiation photoemission spectroscopy. Photoemission data demonstrate that As atoms are segregated on the metal overlayer during Au and Ag deposition on GaAs surfaces with native oxide, while the As segregation is suppressed on the (NH4)2Sx-treated GaAs surface which has no native oxide. In the case of Au deposition, we demonstrate that for low coverages of Au the formation of AgGa alloy is suppressed on the (NH4)2Sx-treated surface. The island growth of Ag film and the absence of AgGa alloy during Ag deposition are observed, an indication that no reaction occurs between the Ag and the (NH4)2Sx-treated GaAs substrate. We suggest that the removal of native oxide and sulfur-termination are crucial to the passivation of metal/GaAs interfaces.",

author = "Daisei Shoji and Miura, {Taka aki} and Michio Niwano and Nobuo Miyamoto",

year = "1998",

doi = "10.1016/S0169-4332(98)00098-1",

language = "English",

volume = "130-132",

pages = "441--446",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

note = "Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

}

TY - JOUR

T1 - Photoemission study of metal deposition on sulfur-treated GaAs(100)

AU - Shoji, Daisei

AU - Miura, Taka aki

AU - Niwano, Michio

AU - Miyamoto, Nobuo

PY - 1998

Y1 - 1998

N2 - The chemical properties of metal/GaAs interfaces formed by the deposition of metals, Au and Ag, onto the GaAs(100) surfaces treated with H2SO4 and (NH4)2Sx solutions, have been investigated using synchrotron-radiation photoemission spectroscopy. Photoemission data demonstrate that As atoms are segregated on the metal overlayer during Au and Ag deposition on GaAs surfaces with native oxide, while the As segregation is suppressed on the (NH4)2Sx-treated GaAs surface which has no native oxide. In the case of Au deposition, we demonstrate that for low coverages of Au the formation of AgGa alloy is suppressed on the (NH4)2Sx-treated surface. The island growth of Ag film and the absence of AgGa alloy during Ag deposition are observed, an indication that no reaction occurs between the Ag and the (NH4)2Sx-treated GaAs substrate. We suggest that the removal of native oxide and sulfur-termination are crucial to the passivation of metal/GaAs interfaces.

AB - The chemical properties of metal/GaAs interfaces formed by the deposition of metals, Au and Ag, onto the GaAs(100) surfaces treated with H2SO4 and (NH4)2Sx solutions, have been investigated using synchrotron-radiation photoemission spectroscopy. Photoemission data demonstrate that As atoms are segregated on the metal overlayer during Au and Ag deposition on GaAs surfaces with native oxide, while the As segregation is suppressed on the (NH4)2Sx-treated GaAs surface which has no native oxide. In the case of Au deposition, we demonstrate that for low coverages of Au the formation of AgGa alloy is suppressed on the (NH4)2Sx-treated surface. The island growth of Ag film and the absence of AgGa alloy during Ag deposition are observed, an indication that no reaction occurs between the Ag and the (NH4)2Sx-treated GaAs substrate. We suggest that the removal of native oxide and sulfur-termination are crucial to the passivation of metal/GaAs interfaces.

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U2 - 10.1016/S0169-4332(98)00098-1

DO - 10.1016/S0169-4332(98)00098-1

M3 - Conference article

AN - SCOPUS:17444434095

VL - 130-132

SP - 441

EP - 446

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4

Y2 - 27 October 1997 through 30 October 1997

ER -

Photoemission study of metal deposition on sulfur-treated GaAs(100)

Abstract

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