Photoemission and BIS study of Ce4Bi3 and CeBi0.7Te0.3

S. J. Oh, S. Suga, Y. Saito, A. Kakizaki, T. Ishii, M. Taniguchi, A. Fujimori, T. Miyahara, H. Kato, A. Ochiai, T. Suzuki, T. Kasuya

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Abstract

The electronic structures of Ce4Bi3 and CeBi0.7Te0.3 were studied by core-level X-ray photoelectron spectroscopy (XPS), valence band resonant photoemission using synchrotron radiation, and Bremsstrahlung Isochromat Spectroscopy (BIS). The 3d core-level XPS shows that the valence of Ce ions is close to three in both compounds, and the effective hybridization between Ce 4f level with valence electrons is stronger for CeBi0.7Te0.3 than Ce4Bi3. This is probably due to the stronger p-f mixing matrix element in CeBi0.7Te0.3 resulting from the shorter distance between Ce and Bi atoms. The density of states (DOS) near the Fermi level was also measured by the ultraviolet photoelectron spectroscopy and BIS, and it is found to be larger for Ce4Bi3 than CeBi0.7Te0.3. This difference comes about primarily because a larger number of extra electrons fill the Ce 5d conduction band in Ce4Bi3.

Original languageEnglish
Pages (from-to)581-586
Number of pages6
JournalSolid State Communications
Volume82
Issue number7
DOIs
Publication statusPublished - 1992 May

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Oh, S. J., Suga, S., Saito, Y., Kakizaki, A., Ishii, T., Taniguchi, M., Fujimori, A., Miyahara, T., Kato, H., Ochiai, A., Suzuki, T., & Kasuya, T. (1992). Photoemission and BIS study of Ce4Bi3 and CeBi0.7Te0.3. Solid State Communications, 82(7), 581-586. https://doi.org/10.1016/0038-1098(92)90237-4