Photoelectron spectroscopy and photoelectron diffraction studies of Si(001)2×1-K and -Cs surfaces

S. Kono, Y. Enta, Tadashi Abukawa, T. Kinoshita, T. Sakamoto

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Single-domain Si(001)2×1-K and -Cs surfaces have been studied by angle-resolved ultraviolet photoelectron spectroscopy and X-ray photoelectron diffraction. Dispersions of two surface-state bands that would be occupied with electrons from K4s states and Si-dimer dangling bonds are identified by ARUPS. An XPD study for the SD Si(001)2×1-Cs surface has further reinforced the reliability of an alkali-double-layer model. A negative-electron-affinity surface has been made by exposing the SD Si(001)2×1-Cs surface to oxygen. It is found from XPD that the framework of the Cs-double-layer is not affected by O2-exposure and that oxygen adsorption takes place at a level which is coplanar with the lower Cs-layers.

Original languageEnglish
Pages (from-to)75-81
Number of pages7
JournalApplied Surface Science
Volume41-42
Issue numberC
DOIs
Publication statusPublished - 1990 Jan 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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