Photoelectron spectroscopy and photoelectron diffraction studies of Si(001)2×1-K and -Cs surfaces

S. Kono; Y. Enta; Tadashi Abukawa; T. Kinoshita; T. Sakamoto

doi:10.1016/0169-4332(89)90036-6

Photoelectron spectroscopy and photoelectron diffraction studies of Si(001)2×1-K and -Cs surfaces

S. Kono, Y. Enta, Tadashi Abukawa, T. Kinoshita, T. Sakamoto

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Single-domain Si(001)2×1-K and -Cs surfaces have been studied by angle-resolved ultraviolet photoelectron spectroscopy and X-ray photoelectron diffraction. Dispersions of two surface-state bands that would be occupied with electrons from K4s states and Si-dimer dangling bonds are identified by ARUPS. An XPD study for the SD Si(001)2×1-Cs surface has further reinforced the reliability of an alkali-double-layer model. A negative-electron-affinity surface has been made by exposing the SD Si(001)2×1-Cs surface to oxygen. It is found from XPD that the framework of the Cs-double-layer is not affected by O₂-exposure and that oxygen adsorption takes place at a level which is coplanar with the lower Cs-layers.

Original language	English
Pages (from-to)	75-81
Number of pages	7
Journal	Applied Surface Science
Volume	41-42
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(89)90036-6
Publication status	Published - 1990 Jan 1

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Photoelectron spectroscopy and photoelectron diffraction studies of Si(001)2×1-K and -Cs surfaces",

abstract = "Single-domain Si(001)2×1-K and -Cs surfaces have been studied by angle-resolved ultraviolet photoelectron spectroscopy and X-ray photoelectron diffraction. Dispersions of two surface-state bands that would be occupied with electrons from K4s states and Si-dimer dangling bonds are identified by ARUPS. An XPD study for the SD Si(001)2×1-Cs surface has further reinforced the reliability of an alkali-double-layer model. A negative-electron-affinity surface has been made by exposing the SD Si(001)2×1-Cs surface to oxygen. It is found from XPD that the framework of the Cs-double-layer is not affected by O2-exposure and that oxygen adsorption takes place at a level which is coplanar with the lower Cs-layers.",

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T1 - Photoelectron spectroscopy and photoelectron diffraction studies of Si(001)2×1-K and -Cs surfaces

AU - Kono, S.

AU - Enta, Y.

AU - Abukawa, Tadashi

AU - Kinoshita, T.

AU - Sakamoto, T.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - Single-domain Si(001)2×1-K and -Cs surfaces have been studied by angle-resolved ultraviolet photoelectron spectroscopy and X-ray photoelectron diffraction. Dispersions of two surface-state bands that would be occupied with electrons from K4s states and Si-dimer dangling bonds are identified by ARUPS. An XPD study for the SD Si(001)2×1-Cs surface has further reinforced the reliability of an alkali-double-layer model. A negative-electron-affinity surface has been made by exposing the SD Si(001)2×1-Cs surface to oxygen. It is found from XPD that the framework of the Cs-double-layer is not affected by O2-exposure and that oxygen adsorption takes place at a level which is coplanar with the lower Cs-layers.

AB - Single-domain Si(001)2×1-K and -Cs surfaces have been studied by angle-resolved ultraviolet photoelectron spectroscopy and X-ray photoelectron diffraction. Dispersions of two surface-state bands that would be occupied with electrons from K4s states and Si-dimer dangling bonds are identified by ARUPS. An XPD study for the SD Si(001)2×1-Cs surface has further reinforced the reliability of an alkali-double-layer model. A negative-electron-affinity surface has been made by exposing the SD Si(001)2×1-Cs surface to oxygen. It is found from XPD that the framework of the Cs-double-layer is not affected by O2-exposure and that oxygen adsorption takes place at a level which is coplanar with the lower Cs-layers.

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