Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals

Takahiro Nagata, Oliver Bierwagen, Zbigniew Galazka, Shigenori Ueda, Masataka Imura, Yoshiyuki Yamashita, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Electronic states and band bending behavior of SnO2 single crystals grown by physical vapor transport were investigated by combining surface-sensitive soft-and bulk-sensitive hard X-ray photoelectron spectroscopy (PES). The as-grown SnO2 crystals had a higher density of in-gap states relating to oxygen vacancies in comparison with the SnO2 crystal annealed at 1100 °C under oxygen atmosphere. Both samples have similar Fermi level pinning at 0.26 eV below the conduction band minimum at the surface and no surface accumulation layer. The estimated carrier density by PES at the surface of the as-grown and annealed SnO2 crystals were 3.2 × 1017 and 3.2 × 1015 cm-3, respectively.

Original languageEnglish
Article number080903
JournalJapanese journal of applied physics
Volume58
Issue number8
DOIs
Publication statusPublished - 2019 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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