Photoelectron spectroscopic study on band alignment of poly(3- hexylthiophene-2,5-diyl)/polar-ZnO heterointerface

Takahiro Nagata; Seungjun Oh; Yoshiyuki Yamashita; Hideki Yoshikawa; Norihiro Ikeno; Keisuke Kobayashi; Toyohiro Chikyow; Yutaka Wakayama

doi:10.1016/j.tsf.2013.08.018

Photoelectron spectroscopic study on band alignment of poly(3- hexylthiophene-2,5-diyl)/polar-ZnO heterointerface

Takahiro Nagata, Seungjun Oh, Yoshiyuki Yamashita, Hideki Yoshikawa, Norihiro Ikeno, Keisuke Kobayashi, Toyohiro Chikyow, Yutaka Wakayama

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

We used hard X-ray photoelectron spectroscopy (HX-PES) to investigate the polarity effect of ZnO, which has Zn terminated (+ polar) and O terminated (- polar) surfaces, on poly(3-hexylthiophene-2,5-diyl) (P3HT)/ZnO photovoltaic structures. HX-PES, which has a longer inelastic mean free path than conventional X-ray photoelectron spectroscopy, revealed that the open circuit voltage (V_OC), estimated from the gap between the highest occupied molecular orbital of P3HT and the conduction band minimum of Zn-polar ZnO, was larger than that of the O-polar ZnO. Although polarity dependence was observed for the electrical structure at the P3HT/ZnO interface, the V_OC of the photovoltaic property of Zn-polar ZnO was almost the same as that of O-polar ZnO (~ 0.4 V) due to electron-hole recombination, which degrades the photovoltaic properties at the interface. The HX-PES results also suggested that the recombination could be attributed to the short depletion length of the ZnO surface.

Original language	English
Pages (from-to)	194-198
Number of pages	5
Journal	Thin Solid Films
Volume	554
DOIs	https://doi.org/10.1016/j.tsf.2013.08.018
Publication status	Published - 2014 Mar 3
Externally published	Yes

Keywords

Band alignment
Hard X-ray photoelectron spectroscopy
Organic/inorganic interface
Photovoltaic device
Polymer semiconductor
Zinc oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Nagata, T., Oh, S., Yamashita, Y., Yoshikawa, H., Ikeno, N., Kobayashi, K., Chikyow, T., & Wakayama, Y. (2014). Photoelectron spectroscopic study on band alignment of poly(3- hexylthiophene-2,5-diyl)/polar-ZnO heterointerface. Thin Solid Films, 554, 194-198. https://doi.org/10.1016/j.tsf.2013.08.018

Photoelectron spectroscopic study on band alignment of poly(3- hexylthiophene-2,5-diyl)/polar-ZnO heterointerface. / Nagata, Takahiro; Oh, Seungjun; Yamashita, Yoshiyuki; Yoshikawa, Hideki; Ikeno, Norihiro; Kobayashi, Keisuke; Chikyow, Toyohiro; Wakayama, Yutaka.

In: Thin Solid Films, Vol. 554, 03.03.2014, p. 194-198.

Research output: Contribution to journal › Article

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abstract = "We used hard X-ray photoelectron spectroscopy (HX-PES) to investigate the polarity effect of ZnO, which has Zn terminated (+ polar) and O terminated (- polar) surfaces, on poly(3-hexylthiophene-2,5-diyl) (P3HT)/ZnO photovoltaic structures. HX-PES, which has a longer inelastic mean free path than conventional X-ray photoelectron spectroscopy, revealed that the open circuit voltage (VOC), estimated from the gap between the highest occupied molecular orbital of P3HT and the conduction band minimum of Zn-polar ZnO, was larger than that of the O-polar ZnO. Although polarity dependence was observed for the electrical structure at the P3HT/ZnO interface, the VOC of the photovoltaic property of Zn-polar ZnO was almost the same as that of O-polar ZnO (~ 0.4 V) due to electron-hole recombination, which degrades the photovoltaic properties at the interface. The HX-PES results also suggested that the recombination could be attributed to the short depletion length of the ZnO surface.",

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