Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

T. Nagata; S. Oh; Y. Yamashita; H. Yoshikawa; N. Ikeno; K. Kobayashi; T. Chikyow; Y. Wakayama

doi:10.1063/1.4790298

Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, N. Ikeno, K. Kobayashi, T. Chikyow, Y. Wakayama

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Using x-ray photoelectron spectroscopy, we investigated the band alignment of a Ag/poly(3-hexylthiophene-2,5-diyl) (P3HT)/ZnO photovoltaic structure. At the P3HT/ZnO interface, a band bending of P3HT and a short surface depletion layer of ZnO were observed. The offset between the highest occupied molecular orbital of P3HT and the conduction band minimum of ZnO at the interface contributed to the open circuit voltage (Voc) was estimated to be approximately 1.5 ± 0.1 eV, which was bigger than that of the electrically measured effective Voc of P3HT/ZnO photovoltaic devices, meaning that the P3HT/ZnO photovoltaic structure has the potential to provide improved photovoltaic properties.

Original language	English
Article number	043302
Journal	Applied Physics Letters
Volume	102
Issue number	4
DOIs	https://doi.org/10.1063/1.4790298
Publication status	Published - 2013 Jan 28
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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title = "Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure",

abstract = "Using x-ray photoelectron spectroscopy, we investigated the band alignment of a Ag/poly(3-hexylthiophene-2,5-diyl) (P3HT)/ZnO photovoltaic structure. At the P3HT/ZnO interface, a band bending of P3HT and a short surface depletion layer of ZnO were observed. The offset between the highest occupied molecular orbital of P3HT and the conduction band minimum of ZnO at the interface contributed to the open circuit voltage (Voc) was estimated to be approximately 1.5 ± 0.1 eV, which was bigger than that of the electrically measured effective Voc of P3HT/ZnO photovoltaic devices, meaning that the P3HT/ZnO photovoltaic structure has the potential to provide improved photovoltaic properties.",

author = "T. Nagata and S. Oh and Y. Yamashita and H. Yoshikawa and N. Ikeno and K. Kobayashi and T. Chikyow and Y. Wakayama",

note = "Funding Information: We are grateful to HiSOR, Hiroshima University, and JAEA/SPring-8 for the development of HX-PES at BL15XU in SPring-8. The HX-PES measurements were performed with the approval of the NIMS Beamline Station (Proposal No. 2010A 4604 and 2011A 4611). This work was supported in part by the Bilateral Joint Project involving Hungary and Japan established by the Japan Society for the Promotion of Science (JSPS). WPI-MANA was established by World Premier International Research Center Initiative (WPI), the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.",

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doi = "10.1063/1.4790298",

language = "English",

volume = "102",

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T1 - Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

AU - Nagata, T.

AU - Oh, S.

AU - Yamashita, Y.

AU - Yoshikawa, H.

AU - Ikeno, N.

AU - Kobayashi, K.

AU - Chikyow, T.

AU - Wakayama, Y.

N1 - Funding Information: We are grateful to HiSOR, Hiroshima University, and JAEA/SPring-8 for the development of HX-PES at BL15XU in SPring-8. The HX-PES measurements were performed with the approval of the NIMS Beamline Station (Proposal No. 2010A 4604 and 2011A 4611). This work was supported in part by the Bilateral Joint Project involving Hungary and Japan established by the Japan Society for the Promotion of Science (JSPS). WPI-MANA was established by World Premier International Research Center Initiative (WPI), the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.

PY - 2013/1/28

Y1 - 2013/1/28

N2 - Using x-ray photoelectron spectroscopy, we investigated the band alignment of a Ag/poly(3-hexylthiophene-2,5-diyl) (P3HT)/ZnO photovoltaic structure. At the P3HT/ZnO interface, a band bending of P3HT and a short surface depletion layer of ZnO were observed. The offset between the highest occupied molecular orbital of P3HT and the conduction band minimum of ZnO at the interface contributed to the open circuit voltage (Voc) was estimated to be approximately 1.5 ± 0.1 eV, which was bigger than that of the electrically measured effective Voc of P3HT/ZnO photovoltaic devices, meaning that the P3HT/ZnO photovoltaic structure has the potential to provide improved photovoltaic properties.

AB - Using x-ray photoelectron spectroscopy, we investigated the band alignment of a Ag/poly(3-hexylthiophene-2,5-diyl) (P3HT)/ZnO photovoltaic structure. At the P3HT/ZnO interface, a band bending of P3HT and a short surface depletion layer of ZnO were observed. The offset between the highest occupied molecular orbital of P3HT and the conduction band minimum of ZnO at the interface contributed to the open circuit voltage (Voc) was estimated to be approximately 1.5 ± 0.1 eV, which was bigger than that of the electrically measured effective Voc of P3HT/ZnO photovoltaic devices, meaning that the P3HT/ZnO photovoltaic structure has the potential to provide improved photovoltaic properties.

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Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

Abstract

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