We have found that the photoelectron intensity of the dimer-dangling-bond- derived surface state on Si(100) shows a periodic oscillation during chemical vapor deposition with Si2H6 gas. The substrate temperature and Si2H6-pressure dependence of the oscillation period was measured. By use of a selective-growth method using SiO2- patterned wafers, one oscillation period was clarified to correspond to the Si growth of one atomic layer of the Si(100) plane with a thickness of 1.36 Å.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)