Photoelectron intensity oscillation as a probe to monitor Si layer-by-layer growth

Yoshiharu Enta; Nobuo Miyamoto; Yuji Takakuwa; Hiroo Kato

doi:10.1016/0169-4332(94)90236-4

Photoelectron intensity oscillation as a probe to monitor Si layer-by-layer growth

Yoshiharu Enta, Nobuo Miyamoto, Yuji Takakuwa, Hiroo Kato

Division of Measurements

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Photoelectron intensities from the surface state on Si(100)2 × 1 periodically oscillate during Si epitaxial growth, for which an alternation between 2 × 1 and 1 × 2 surface reconstructions has been proposed as an origin [Y. Enta et al., Surf. Sci. 313 (1994) L797]. To confirm the scheme more directly, we have performed synchrotron radiation ultraviolet photoelectron spectroscopy (UPS) measurements on both 2 × 1 and 1 × 2 surfaces. As a result, an apparent difference between the two valence-band spectra was observed, whose difference spectrum presented a good agreement with the dependence of the oscillation amplitude on the photoelectron energy, proving the validity of our previous proposal. A selection rule argument on the initial and final state symmetries yields an insight on the origin for the oscillation. With its very high sensitivity, UPS oscillation can be a powerful tool for monitoring the layer-by-layer growth at surfaces.

Original language	English
Pages (from-to)	327-331
Number of pages	5
Journal	Applied Surface Science
Volume	82-83
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(94)90236-4
Publication status	Published - 1994 Dec 2

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "Photoelectron intensities from the surface state on Si(100)2 × 1 periodically oscillate during Si epitaxial growth, for which an alternation between 2 × 1 and 1 × 2 surface reconstructions has been proposed as an origin [Y. Enta et al., Surf. Sci. 313 (1994) L797]. To confirm the scheme more directly, we have performed synchrotron radiation ultraviolet photoelectron spectroscopy (UPS) measurements on both 2 × 1 and 1 × 2 surfaces. As a result, an apparent difference between the two valence-band spectra was observed, whose difference spectrum presented a good agreement with the dependence of the oscillation amplitude on the photoelectron energy, proving the validity of our previous proposal. A selection rule argument on the initial and final state symmetries yields an insight on the origin for the oscillation. With its very high sensitivity, UPS oscillation can be a powerful tool for monitoring the layer-by-layer growth at surfaces.",

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AU - Enta, Yoshiharu

AU - Miyamoto, Nobuo

AU - Takakuwa, Yuji

AU - Kato, Hiroo

PY - 1994/12/2

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N2 - Photoelectron intensities from the surface state on Si(100)2 × 1 periodically oscillate during Si epitaxial growth, for which an alternation between 2 × 1 and 1 × 2 surface reconstructions has been proposed as an origin [Y. Enta et al., Surf. Sci. 313 (1994) L797]. To confirm the scheme more directly, we have performed synchrotron radiation ultraviolet photoelectron spectroscopy (UPS) measurements on both 2 × 1 and 1 × 2 surfaces. As a result, an apparent difference between the two valence-band spectra was observed, whose difference spectrum presented a good agreement with the dependence of the oscillation amplitude on the photoelectron energy, proving the validity of our previous proposal. A selection rule argument on the initial and final state symmetries yields an insight on the origin for the oscillation. With its very high sensitivity, UPS oscillation can be a powerful tool for monitoring the layer-by-layer growth at surfaces.

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