Photoelectron diffraction study of the Si 2p surface-core-level-shift of the Si(0 0 1)(1 × 2)-Sb surface

M. Shimomura, T. Abukawa, K. Yoshimura, J. H. Oh, H. W. Yeom, S. Kono

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Structural parameters of the Si(0 0 1)(1 × 2)-Sb surface were optimized by photoelectron diffraction (PED) of Sb 4d peaks. The optimized parameters are 3.17±0.1 Å for Sb-dimer bond length and 1.78±0.1 Å for the layer spacing between Sb and the first layer Si. The main origin of a surface-core-level-shifted (SCLS) component in Si 2p core-level spectra is identified by SCLS-PED to be the first layer Si atoms connected to Sb dimers. Another SCLS component reported previously was not observed, which indicates that this SCLS component is related to some defects on the (1 × 2)-Sb surface.

Original languageEnglish
Pages (from-to)23-28
Number of pages6
JournalSurface Science
Volume493
Issue number1-3
DOIs
Publication statusPublished - 2001 Nov 1

Keywords

  • Antimony
  • Photoelectron diffraction
  • Silicon
  • Surface relaxation and reconstruction
  • Surface structure, morphology, roughness, and topography

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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