Photoelectron diffraction of the Si(111)-×)R30°-Ga surface: Local atomic structureand vibrational correlation

T. Hanada, H. Daimon

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The kinetic-energy dependence of the polar-angle photoelectron diffraction of Ga 3d emission was measured on the Si(111)-((Formula presented)×(Formula presented))R30°-Ga surface using synchrotron radiation. The energy-dependent variations in the polar-angle intensity distribution can be reproduced by model calculations essentially assuming one scattering Si atom 2.6 Å below the Ga photoelectron emitter. This fact clearly indicates that the Ga atom adsorbs at the site directly above a second-layer Si atom ((Formula presented) site). Calculations of the photoelectron diffraction using larger clusters have revealed that the vibrational correlation between the Ga adatom and the Si atom directly below it is very strong. This correlation effect emphasize the scatterings by the Si atom directly below the emitter compared with those by other surrounding atoms.

Original languageEnglish
Pages (from-to)16420-16425
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume55
Issue number24
DOIs
Publication statusPublished - 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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