Photoelectrochemical properties of single crystalline and polycrystalline GaN grown by the Na-flux method

Katsushi Fujn, Takashi Kato, Tsutomu Minegishi, Takahiro Yamada, Hisanori Yamane, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A single crystal and polycrystals of GaN grown by the Na-flux method were photoelectrochemically characterized. The flatband potential of the GaN single crystal was approximately 0.2 V anodic of the potential of the GaN layer grown by metal-organic vapor phase epitaxy. Clear photo-electrochemical response was observed for the GaN single crystal The turn-on slopes of the photocurrent for the poly-crystalline samples were gentler than the slope for the single crystaL The turn-on slopes were probably affected by the high resistivity of grain boundaries in the polycrystalline samples.

Original languageEnglish
Pages (from-to)136-139
Number of pages4
JournalElectrochemistry
Volume78
Issue number2
DOIs
Publication statusPublished - 2010 Feb

Keywords

  • GaN
  • Photoelectrochemistry
  • The Na-flux method

ASJC Scopus subject areas

  • Electrochemistry

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