Photoelastic effect in silicon ring resonators

Yoshiteru Amemiya; Yuichiro Tanushi; Tomohiro Tokunaga; Shin Yokoyama

doi:10.1143/JJAP.47.2910

Photoelastic effect in silicon ring resonators

Yoshiteru Amemiya, Yuichiro Tanushi, Tomohiro Tokunaga, Shin Yokoyama

Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The photoelastic effect of Si was measured in a real optical device, a racetrack ring resonator. The sample holder that can induce strain mechanically was fabricated and the strain dependence of resonance wavelength was investigated. The holder can induce a 10^-4 order strain and a 0.1 nm order shift of resonance wavelength induced by this strain was observed. By subtracting the contribution of change in the circumference of the racetrack ring resonator from the resonance wavelength shift, the photoelastic effect was estimated. As a result, the obtained photoelastic coefficient was consistent with that of bulk Si.

Original language	English
Pages (from-to)	2910-2914
Number of pages	5
Journal	Japanese journal of applied physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.2910
Publication status	Published - 2008 Apr 25

Keywords

Electrooptic effect
Optical interconnection
Optical switch
Photoelastic effect
Racetrack ring resonator
Silicon device
Strain

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{ef3cb88ade9447da8ebc3e6606f66391,

title = "Photoelastic effect in silicon ring resonators",

abstract = "The photoelastic effect of Si was measured in a real optical device, a racetrack ring resonator. The sample holder that can induce strain mechanically was fabricated and the strain dependence of resonance wavelength was investigated. The holder can induce a 10-4 order strain and a 0.1 nm order shift of resonance wavelength induced by this strain was observed. By subtracting the contribution of change in the circumference of the racetrack ring resonator from the resonance wavelength shift, the photoelastic effect was estimated. As a result, the obtained photoelastic coefficient was consistent with that of bulk Si.",

keywords = "Electrooptic effect, Optical interconnection, Optical switch, Photoelastic effect, Racetrack ring resonator, Silicon device, Strain",

author = "Yoshiteru Amemiya and Yuichiro Tanushi and Tomohiro Tokunaga and Shin Yokoyama",

year = "2008",

month = apr,

day = "25",

doi = "10.1143/JJAP.47.2910",

language = "English",

volume = "47",

pages = "2910--2914",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 PART 2",

}

TY - JOUR

T1 - Photoelastic effect in silicon ring resonators

AU - Amemiya, Yoshiteru

AU - Tanushi, Yuichiro

AU - Tokunaga, Tomohiro

AU - Yokoyama, Shin

PY - 2008/4/25

Y1 - 2008/4/25

N2 - The photoelastic effect of Si was measured in a real optical device, a racetrack ring resonator. The sample holder that can induce strain mechanically was fabricated and the strain dependence of resonance wavelength was investigated. The holder can induce a 10-4 order strain and a 0.1 nm order shift of resonance wavelength induced by this strain was observed. By subtracting the contribution of change in the circumference of the racetrack ring resonator from the resonance wavelength shift, the photoelastic effect was estimated. As a result, the obtained photoelastic coefficient was consistent with that of bulk Si.

AB - The photoelastic effect of Si was measured in a real optical device, a racetrack ring resonator. The sample holder that can induce strain mechanically was fabricated and the strain dependence of resonance wavelength was investigated. The holder can induce a 10-4 order strain and a 0.1 nm order shift of resonance wavelength induced by this strain was observed. By subtracting the contribution of change in the circumference of the racetrack ring resonator from the resonance wavelength shift, the photoelastic effect was estimated. As a result, the obtained photoelastic coefficient was consistent with that of bulk Si.

KW - Electrooptic effect

KW - Optical interconnection

KW - Optical switch

KW - Photoelastic effect

KW - Racetrack ring resonator

KW - Silicon device

KW - Strain

UR - http://www.scopus.com/inward/record.url?scp=54249099582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54249099582&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.2910

DO - 10.1143/JJAP.47.2910

M3 - Article

AN - SCOPUS:54249099582

VL - 47

SP - 2910

EP - 2914

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 PART 2

ER -

Photoelastic effect in silicon ring resonators

Abstract

Keywords

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