Photoelastic effect in silicon ring resonators

Yoshiteru Amemiya, Yuichiro Tanushi, Tomohiro Tokunaga, Shin Yokoyama

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The photoelastic effect of Si was measured in a real optical device, a racetrack ring resonator. The sample holder that can induce strain mechanically was fabricated and the strain dependence of resonance wavelength was investigated. The holder can induce a 10-4 order strain and a 0.1 nm order shift of resonance wavelength induced by this strain was observed. By subtracting the contribution of change in the circumference of the racetrack ring resonator from the resonance wavelength shift, the photoelastic effect was estimated. As a result, the obtained photoelastic coefficient was consistent with that of bulk Si.

Original languageEnglish
Pages (from-to)2910-2914
Number of pages5
JournalJapanese journal of applied physics
Issue number4 PART 2
Publication statusPublished - 2008 Apr 25
Externally publishedYes


  • Electrooptic effect
  • Optical interconnection
  • Optical switch
  • Photoelastic effect
  • Racetrack ring resonator
  • Silicon device
  • Strain

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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