Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light

Taiki Nakazawa, Rihito Kuroda, Yasumasa Koda, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

In this work, n+pn-type photodiodes with various surface n + layer profiles formed on the atomically flat Si surface were evaluated to investigate the relationships between the surface photo-generated carrier drift layer dopant profiles with a high uniformity and sensitivity and stability to UV-light. The degradation mechanism of photodiode sensitivitiy in UVlight wavelength due to UV-light exposure is explained by the changes in the fixed charges and the interface states at Si/SiO2 system above photodiode. Finally, a design strategy of photodiode dopant profile to achieve a high sensitivity and a high stability to UV-light is proposed.

Original languageEnglish
Title of host publicationProceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII
PublisherSPIE
ISBN (Print)9780819489456
DOIs
Publication statusPublished - 2012 Jan 1
EventSensors, Cameras, and Systems for Industrial and Scientific Applications XIII - Burlingame, CA, United States
Duration: 2012 Jan 252012 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8298
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherSensors, Cameras, and Systems for Industrial and Scientific Applications XIII
CountryUnited States
CityBurlingame, CA
Period12/1/2512/1/26

Keywords

  • Atomically flat Si surface
  • Photodiode
  • UV-light

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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