Photochemical switching of ultrathin PbTi O3 films

R. Takahashi; J. K. Grepstad; T. Tybell; Y. Matsumoto

doi:10.1063/1.2890485

Photochemical switching of ultrathin PbTi O3 films

R. Takahashi, J. K. Grepstad, T. Tybell, Y. Matsumoto

Research output: Contribution to journal › Article

27 Citations (Scopus)

Abstract

The ferroelectric domain ground state of PbTi O3 thin films on Nb:SrTi O3 substrates has been studied as a function of film thickness. High resolution linear Qx x-ray diffraction profiles were recorded in order to probe the presence of stripe domains, which were invariably observed for as-grown samples. After photochemical treatment, films thinner than 50 unit cells were switched to a monodomain state that could be reversed upon subsequent annealing. The stripe-domain state is linked to a Qx modulation of the Qz parameter in the reciprocal space, which disappears upon switching.

Original language	English
Article number	112901
Journal	Applied Physics Letters
Volume	92
Issue number	11
DOIs	https://doi.org/10.1063/1.2890485
Publication status	Published - 2008 Mar 28
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2890485

Fingerprint Dive into the research topics of 'Photochemical switching of ultrathin PbTi O3 films'. Together they form a unique fingerprint.

Cite this

Takahashi, R., Grepstad, J. K., Tybell, T., & Matsumoto, Y. (2008). Photochemical switching of ultrathin PbTi O3 films. Applied Physics Letters, 92(11), [112901]. https://doi.org/10.1063/1.2890485

@article{125d7fb5f57a48bd95aaaa687266683c,

title = "Photochemical switching of ultrathin PbTi O3 films",

abstract = "The ferroelectric domain ground state of PbTi O3 thin films on Nb:SrTi O3 substrates has been studied as a function of film thickness. High resolution linear Qx x-ray diffraction profiles were recorded in order to probe the presence of stripe domains, which were invariably observed for as-grown samples. After photochemical treatment, films thinner than 50 unit cells were switched to a monodomain state that could be reversed upon subsequent annealing. The stripe-domain state is linked to a Qx modulation of the Qz parameter in the reciprocal space, which disappears upon switching.",

author = "R. Takahashi and Grepstad, {J. K.} and T. Tybell and Y. Matsumoto",

year = "2008",

month = mar,

day = "28",

doi = "10.1063/1.2890485",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Photochemical switching of ultrathin PbTi O3 films

AU - Takahashi, R.

AU - Grepstad, J. K.

AU - Tybell, T.

AU - Matsumoto, Y.

PY - 2008/3/28

Y1 - 2008/3/28

N2 - The ferroelectric domain ground state of PbTi O3 thin films on Nb:SrTi O3 substrates has been studied as a function of film thickness. High resolution linear Qx x-ray diffraction profiles were recorded in order to probe the presence of stripe domains, which were invariably observed for as-grown samples. After photochemical treatment, films thinner than 50 unit cells were switched to a monodomain state that could be reversed upon subsequent annealing. The stripe-domain state is linked to a Qx modulation of the Qz parameter in the reciprocal space, which disappears upon switching.

AB - The ferroelectric domain ground state of PbTi O3 thin films on Nb:SrTi O3 substrates has been studied as a function of film thickness. High resolution linear Qx x-ray diffraction profiles were recorded in order to probe the presence of stripe domains, which were invariably observed for as-grown samples. After photochemical treatment, films thinner than 50 unit cells were switched to a monodomain state that could be reversed upon subsequent annealing. The stripe-domain state is linked to a Qx modulation of the Qz parameter in the reciprocal space, which disappears upon switching.

UR - http://www.scopus.com/inward/record.url?scp=41049117021&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41049117021&partnerID=8YFLogxK

U2 - 10.1063/1.2890485

DO - 10.1063/1.2890485

M3 - Article

AN - SCOPUS:41049117021

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 112901

ER -