Photochemical properties of nanoparticles of semiconductors fabricated utilizing nanospaces of layered compounds

Tsugio Sato, Yasuhiko Fukugami, Yin Shu

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Cd0.8Zn0.2S pillars were constructed in the interlayer of H1-xCa2-xLaxNb3O10 (x = 0-0.75) by the stepwise intercalation reactions. The height of Cd0.8Zn0.2S pillar was less than 1 nm and the band gap energy of Cd0.8Zn0.2S pillar was slightly larger than that of normal crystalline one. Cd0.8Zn0.2S pillared compounds showed photocatalytic activity for hydrogen evolution in the presence of sacrificial hole acceptor such as Na2SO3 by the band gap irradiation. The photocatalytic activity of Cd0.8Zn0.2S incorporated was superior to that of unsupported one and was improved by doping La3+ ion in the host layer. The heterogeneous electron transfer from guest Cd0.8Zn0.2S to host Ca2-xLaxNb3O10 layer seemed to play an important role to enhance the photocatalytic activity.

Original languageEnglish
Pages (from-to)1905-1910
Number of pages6
JournalScripta Materialia
Volume44
Issue number8-9
DOIs
Publication statusPublished - 2001 May 18

Keywords

  • Chemical synthesis
  • Crystal structure and symmetry
  • Luminescence
  • Optical properties
  • Semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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