Photocapacitive determination of spatial distribution of deep levels at Si/SiO2 interfaces

Jun Ichi Nishizawa, Akihiko Murai, Yutaka Oyama

Research output: Contribution to journalArticlepeer-review


This paper reports the results of photocapacitance measurements applied to the metal-SiO2-Si structure. Photocapacitance measurements under a constant capacitance condition determine the spatial distribution of deep levels existing at Si/SiO2 interface regions. The photocapacitance method revealed deep levels distributed in a spectral region of 0.4-1.05 eV optically, and an optical level located 1.05 eV below the conduction band in the n-Si/SiO2 interface region. With respect to p-Si/SiO2, deep levels distributed at 0.4-0.85 eV and 0.85 eV, 1.05 eV levels above the valence band, were observed. Differences of interface level densities are shown as a function of Si conduction type and different preparations of oxide layers. Comparisons with the results of capacitance-voltage measurements are also discussed.

Original languageEnglish
Pages (from-to)3105-3109
Number of pages5
JournalJournal of the Electrochemical Society
Issue number8
Publication statusPublished - 1999 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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