Photocapacitive detection of hole emission from DX center in si-type Al0.3Ga0.7As doped with Te

Akihiko Murai, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Photocapacitance (PHCAP) measurements are applied to liquid-phase epitaxially grown n-Al0.3Ga0.7As crystals at different temperatures. The PHCAP measurements revealed deep levels optically located at 0.5 eV below the conduction band and 1.5 eV above the valence band [Ec -0.5 eV level (Te-related DX center) and Ec + 1.5 eV level]. The thermal activation energy of electron capture at the ionized Ec-0.5 eV level was found to be 31 meV. The optical hole emission process from the Ec + 1.5 eV level was enhanced with increasing sample temperature. After 1.5 eV monochromatic light preirradiation, the Ec - 0.5 eV level was detected in an intentionallly undoped n-Al0.3Ga0.7As sample. From these results, the structure of the Te-related DX center is discussed.

Original languageEnglish
Pages (from-to)223-227
Number of pages5
JournalJournal of Applied Physics
Volume87
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Photocapacitive detection of hole emission from DX center in si-type Al<sub>0.3</sub>Ga<sub>0.7</sub>As doped with Te'. Together they form a unique fingerprint.

Cite this