Photocapacitance measurement on intentionally undoped n-type g a 0.9 a l 0.1 a s grown by stoichiometry control method

J. Nishizawa; Mitsutake Motozawa; Yutaka Oyama; Kazushi Dezaki; Hiroyuki Fujishiro; Ken Suto

doi:10.1143/JJAP.33.1753

Photocapacitance measurement on intentionally undoped n-type g a _0.9 a l _0.1 a s grown by stoichiometry control method

J. Nishizawa, Mitsutake Motozawa, Yutaka Oyama, Kazushi Dezaki, Hiroyuki Fujishiro, Ken Suto

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga_0.9Al_0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to P_As^1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.

Original language	English
Pages (from-to)	1753-1758
Number of pages	6
Journal	Japanese journal of applied physics
Volume	33
Issue number	4R
DOIs	https://doi.org/10.1143/JJAP.33.1753
Publication status	Published - 1994 Apr
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Photocapacitance measurement on intentionally undoped n-type g a _0.9 a l _0.1 a s grown by stoichiometry control method. / Nishizawa, J.; Motozawa, Mitsutake; Oyama, Yutaka; Dezaki, Kazushi; Fujishiro, Hiroyuki; Suto, Ken.

In: Japanese journal of applied physics, Vol. 33, No. 4R, 04.1994, p. 1753-1758.

Research output: Contribution to journal › Article › peer-review

@article{f68042aad3144c7486eb5a99dc195819,

title = "Photocapacitance measurement on intentionally undoped n-type g a 0.9 a l 0.1 a s grown by stoichiometry control method",

abstract = "Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga0.9Al0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to PAs1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.",

author = "J. Nishizawa and Mitsutake Motozawa and Yutaka Oyama and Kazushi Dezaki and Hiroyuki Fujishiro and Ken Suto",

year = "1994",

month = apr,

doi = "10.1143/JJAP.33.1753",

language = "English",

volume = "33",

pages = "1753--1758",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4R",

}

TY - JOUR

T1 - Photocapacitance measurement on intentionally undoped n-type g a 0.9 a l 0.1 a s grown by stoichiometry control method

AU - Nishizawa, J.

AU - Motozawa, Mitsutake

AU - Oyama, Yutaka

AU - Dezaki, Kazushi

AU - Fujishiro, Hiroyuki

AU - Suto, Ken

PY - 1994/4

Y1 - 1994/4

N2 - Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga0.9Al0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to PAs1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.

AB - Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga0.9Al0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to PAs1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.

UR - http://www.scopus.com/inward/record.url?scp=0028422146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028422146&partnerID=8YFLogxK

U2 - 10.1143/JJAP.33.1753

DO - 10.1143/JJAP.33.1753

M3 - Article

AN - SCOPUS:0028422146

VL - 33

SP - 1753

EP - 1758

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4R