TY - JOUR
T1 - Photocapacitance measurement on intentionally undoped n-type g a 0.9 a l 0.1 a s grown by stoichiometry control method
AU - Nishizawa, J.
AU - Motozawa, Mitsutake
AU - Oyama, Yutaka
AU - Dezaki, Kazushi
AU - Fujishiro, Hiroyuki
AU - Suto, Ken
PY - 1994/4
Y1 - 1994/4
N2 - Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga0.9Al0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to PAs1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.
AB - Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga0.9Al0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to PAs1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.
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U2 - 10.1143/JJAP.33.1753
DO - 10.1143/JJAP.33.1753
M3 - Article
AN - SCOPUS:0028422146
VL - 33
SP - 1753
EP - 1758
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4R
ER -