Photocapacitance measurement on intentionally undoped n-type g a 0.9 a l 0.1 a s grown by stoichiometry control method

J. Nishizawa, Mitsutake Motozawa, Yutaka Oyama, Kazushi Dezaki, Hiroyuki Fujishiro, Ken Suto

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2 Citations (Scopus)


Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga0.9Al0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to PAs1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.

Original languageEnglish
Pages (from-to)1753-1758
Number of pages6
JournalJapanese journal of applied physics
Issue number4R
Publication statusPublished - 1994 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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