Abstract
Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga0.9Al0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to PAs1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.
| Original language | English |
|---|---|
| Pages (from-to) | 1753-1758 |
| Number of pages | 6 |
| Journal | Japanese journal of applied physics |
| Volume | 33 |
| Issue number | 4R |
| DOIs | |
| Publication status | Published - 1994 Apr |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Nishizawa, J., Motozawa, M., Oyama, Y., Dezaki, K., Fujishiro, H., & Suto, K. (1994). Photocapacitance measurement on intentionally undoped n-type g a 0.9 a l 0.1 a s grown by stoichiometry control method. Japanese journal of applied physics, 33(4R), 1753-1758. https://doi.org/10.1143/JJAP.33.1753