Photocapacitance investigation of the two photoquenching levels in n-type GaAs crystals with excess arsenic atoms

Jun Ichi Nishizawa; Yutaka Oyama; Kazushi Dezaki

doi:10.1063/1.358934

Photocapacitance investigation of the two photoquenching levels in n-type GaAs crystals with excess arsenic atoms

Jun Ichi Nishizawa, Yutaka Oyama, Kazushi Dezaki

Research output: Contribution to journal › Article › peer-review

Abstract

The photocapacitance method is applied to the n-type GaAs crystal in which the excess arsenic atoms are introduced by the 67 h annealing at 900°C under extremely high arsenic vapor pressure of 1950 Torr. The ion density photocapacitance spectra and the temperature dependencies of the photoinduced ion density measurements reveal two photoquenching levels with different level positions and thermal recovery temperatures, respectively.

Original language	English
Pages (from-to)	1311-1313
Number of pages	3
Journal	Journal of Applied Physics
Volume	77
Issue number	3
DOIs	https://doi.org/10.1063/1.358934
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.358934

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title = "Photocapacitance investigation of the two photoquenching levels in n-type GaAs crystals with excess arsenic atoms",

abstract = "The photocapacitance method is applied to the n-type GaAs crystal in which the excess arsenic atoms are introduced by the 67 h annealing at 900°C under extremely high arsenic vapor pressure of 1950 Torr. The ion density photocapacitance spectra and the temperature dependencies of the photoinduced ion density measurements reveal two photoquenching levels with different level positions and thermal recovery temperatures, respectively.",

author = "Nishizawa, {Jun Ichi} and Yutaka Oyama and Kazushi Dezaki",

year = "1995",

doi = "10.1063/1.358934",

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AU - Nishizawa, Jun Ichi

AU - Oyama, Yutaka

AU - Dezaki, Kazushi

PY - 1995

Y1 - 1995

N2 - The photocapacitance method is applied to the n-type GaAs crystal in which the excess arsenic atoms are introduced by the 67 h annealing at 900°C under extremely high arsenic vapor pressure of 1950 Torr. The ion density photocapacitance spectra and the temperature dependencies of the photoinduced ion density measurements reveal two photoquenching levels with different level positions and thermal recovery temperatures, respectively.

AB - The photocapacitance method is applied to the n-type GaAs crystal in which the excess arsenic atoms are introduced by the 67 h annealing at 900°C under extremely high arsenic vapor pressure of 1950 Torr. The ion density photocapacitance spectra and the temperature dependencies of the photoinduced ion density measurements reveal two photoquenching levels with different level positions and thermal recovery temperatures, respectively.

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Photocapacitance investigation of the two photoquenching levels in n-type GaAs crystals with excess arsenic atoms

Abstract

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