Photocapacitance investigation of the two photoquenching levels in n-type GaAs crystals with excess arsenic atoms

Jun Ichi Nishizawa, Yutaka Oyama, Kazushi Dezaki

Research output: Contribution to journalArticlepeer-review

Abstract

The photocapacitance method is applied to the n-type GaAs crystal in which the excess arsenic atoms are introduced by the 67 h annealing at 900°C under extremely high arsenic vapor pressure of 1950 Torr. The ion density photocapacitance spectra and the temperature dependencies of the photoinduced ion density measurements reveal two photoquenching levels with different level positions and thermal recovery temperatures, respectively.

Original languageEnglish
Pages (from-to)1311-1313
Number of pages3
JournalJournal of Applied Physics
Volume77
Issue number3
DOIs
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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