Abstract
Results are reported of a photocapacitance (PHCAP) investigation to evaluate the ionized deep levels in n-GaAs crystals. The PHCAP measurements reveal two sorts of ionized deep levels at 0.50 and 0.74 eV above the valence band at 45 K only during the photoquenching phenomenon. The changes of ion densities are shown as a function of the course of the photoquenching phenomenon. From the change of ion density of each level, it is shown that the generation of the 0.50 eV+Ev level by photoexcitation plays a vital role in the occurrence of the photoquenching phenomenon.
Original language | English |
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Pages (from-to) | 4482-4485 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 75 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1994 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)