Photocapacitance investigation of the ionized levels in n-GaAs crystals and its association with the "photoquenching phenomenon"

Jun Ichi Nishizawa, Yutaka Oyama, Kazushi Dezaki

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Results are reported of a photocapacitance (PHCAP) investigation to evaluate the ionized deep levels in n-GaAs crystals. The PHCAP measurements reveal two sorts of ionized deep levels at 0.50 and 0.74 eV above the valence band at 45 K only during the photoquenching phenomenon. The changes of ion densities are shown as a function of the course of the photoquenching phenomenon. From the change of ion density of each level, it is shown that the generation of the 0.50 eV+Ev level by photoexcitation plays a vital role in the occurrence of the photoquenching phenomenon.

Original languageEnglish
Pages (from-to)4482-4485
Number of pages4
JournalJournal of Applied Physics
Volume75
Issue number9
DOIs
Publication statusPublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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