Photocapacitance investigation of stoichiometry-dependent deep levels in InP

Y. Oyama, J. Nishizawa, K. Kim, K. Suto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The photocapacitance measurements under constant capacitance condition is applied to n- A nd p-type InP crystals prepared by 4h-annealing at 700°C under controlled phosphorus vapor pressure. Samples used are InP bulk crystals grown by the conventional LEC method. Vapour pressure controlled-zone melting grown InP and LPE-grown InP are also investigated. The phosphorus vapor pressure dependence of the deep level density is shown. And the excitation photocapacitance method is also applied to show the precise optical transition mechanism of these deep levels. From these results the defect formation mechanism is discussed in view of the deviation from the stoichiometric composition of InP.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages299-302
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
Publication statusPublished - 1997
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: 1997 Sep 81997 Sep 11

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period97/9/897/9/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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