Photoacoustic characterization of semiconductor heterostructures

Yoshihiko Kanemitsu, Hiroyuki Nabeta, Hitoshi Matsue, Aishi Yamamoto, Yoshihiko Nagata, Kazushi Yamanaka, Toshio Koda, Yasuaki Masumoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have studied optical and elastic properties of semiconductor heterostructures by means of photoacoustic spectroscopy. The energy gap of a wider-gap epitaxial film on a narrower-gap substrate was determined from the spectra of the magnitude and phase of photoacoustic signals. In lattice-mismatched semiconductor heterostructures, the strains due to the lattice mismatch at the interface between epitaxial films and substrates were evaluated by using photoacoustic and Raman spectroscopy.

Original languageEnglish
Pages (from-to)29-31
Number of pages3
JournalJapanese journal of applied physics
Volume31
DOIs
Publication statusPublished - 1992 Jan

Keywords

  • Epitaxial thin film
  • Heterointerface
  • Photoacoustic spectroscopy
  • Raman spectroscopy
  • Semiconductor heterostructure
  • Strain

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Kanemitsu, Y., Nabeta, H., Matsue, H., Yamamoto, A., Nagata, Y., Yamanaka, K., Koda, T., & Masumoto, Y. (1992). Photoacoustic characterization of semiconductor heterostructures. Japanese journal of applied physics, 31, 29-31. https://doi.org/10.7567/JJAPS.31S1.29