Photo-induced phenomena in sputtered GeO2 films

Nobuaki Terakado; Keiji Tanaka

doi:10.1016/j.jnoncrysol.2004.10.002

Photo-induced phenomena in sputtered GeO₂ films

Nobuaki Terakado, Keiji Tanaka

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Macroscopic and microscopic changes in sputtered GeO₂ films induced by band-gap light from an ArF excimer laser have been studied. When irradiated at 1 atm, the film thickness increases, surface-roughness increases, refractive-index decreases, hygroscopic enhancements, and Ge-O-Ge distance increases. Irradiations in vacuum make these changes smaller or undetectable. These photo-induced changes are discussed from phenomenological and structural viewpoints, and compared with characteristics in GeO₂-SiO₂ and GeS₂ films.

Original language	English
Pages (from-to)	54-60
Number of pages	7
Journal	Journal of Non-Crystalline Solids
Volume	351
Issue number	1
DOIs	https://doi.org/10.1016/j.jnoncrysol.2004.10.002
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/j.jnoncrysol.2004.10.002

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title = "Photo-induced phenomena in sputtered GeO2 films",

abstract = "Macroscopic and microscopic changes in sputtered GeO2 films induced by band-gap light from an ArF excimer laser have been studied. When irradiated at 1 atm, the film thickness increases, surface-roughness increases, refractive-index decreases, hygroscopic enhancements, and Ge-O-Ge distance increases. Irradiations in vacuum make these changes smaller or undetectable. These photo-induced changes are discussed from phenomenological and structural viewpoints, and compared with characteristics in GeO2-SiO2 and GeS2 films.",

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AB - Macroscopic and microscopic changes in sputtered GeO2 films induced by band-gap light from an ArF excimer laser have been studied. When irradiated at 1 atm, the film thickness increases, surface-roughness increases, refractive-index decreases, hygroscopic enhancements, and Ge-O-Ge distance increases. Irradiations in vacuum make these changes smaller or undetectable. These photo-induced changes are discussed from phenomenological and structural viewpoints, and compared with characteristics in GeO2-SiO2 and GeS2 films.

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Photo-induced phenomena in sputtered GeO₂ films

Abstract

ASJC Scopus subject areas

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