Photo-induced gap state in the Mott-Hubbard system of halogen-bridged Ni3+ complex({Ni(chxn)2Br}Rr2)

H. Okamoto, K. Okaniwa, T. Mitani, K. Toriumi, M. Yamashita

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20 Citations (Scopus)

Abstract

Photo-induced i.r. absorption measurements have been made on the bromo-bridged Ni3+ complex ({Ni(chxn)2Br}Br2: chxn = cyclohexanediamine), which has the one-dimensional Mott-Hubbard-type ground state. A photo-induced absorption band was observed around 0.25 eV, at 1.3 eV. In the Mott-Hubbard system, this is the first observation of the gap state, which can be ascribed to the formation of small polarons accompanied by the displacements of the bridging bromine ions after photo-excitation of an electron-hole pair. This interpretation is supported by both the observed results of the laser-intensity dependence of the photo-induced signals and the quantum-yield spectra of photoconductivity.

Original languageEnglish
Pages (from-to)465-469
Number of pages5
JournalSolid State Communications
Volume77
Issue number6
DOIs
Publication statusPublished - 1991 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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