Photo-induced anomalous Hall effect in GaAs:MnAs granular films

T. Ogawa, Y. Shuto, K. Ueda, M. Tanaka

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)


We investigated the temperature-dependent Hall resistance and magnetization of the semiconductor/ferromagnetic hybrid structure of GaAs:MnAs granular films under dark and laser irradiated conditions. Under the laser irradiation with the energy above the band gap energy of GaAs, negative large Hall resistance due to the anomalous Hall effect was observed below the blocking temperature Tb of the MnAs clusters. The intrinsic photo-induced magnetization of the MnAs clusters was, however, hardly observed. These results indicate that the blocking phenomena correlate with the photo-induced anomalous Hall resistance of the GaAs:MnAs granular films. Therefore, the magnetic interaction between the photo-induced carriers and the blocked magnetization of the MnAs clusters plays an important role in the photo-induced phenomena in the GaAs:MnAs granular films.

Original languageEnglish
Pages (from-to)1041-1045
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2-4
Publication statusPublished - 2004 Mar
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18


  • GaAs
  • Granular film
  • MnAs
  • Photo-induced anomalous Hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


Dive into the research topics of 'Photo-induced anomalous Hall effect in GaAs:MnAs granular films'. Together they form a unique fingerprint.

Cite this