We have studied the photo catalysis effect in III-V nitride film having the potential overall water splitting under UV- or visible light irradiation. It was found that the photo catalysis effect was greater on the surface of GaN film with Ga-face (+c) polarity than that with N-face (-c) polarity. This polarity dependence was discussed in term of band profile caused by the spontaneous polarization. Alloying InN mole fraction with GaN made it possible to generate the photo catalysis effect for visible light in III-V nitride film.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2007 Dec 1|
|Event||International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan|
Duration: 2006 Oct 22 → 2006 Oct 27
ASJC Scopus subject areas
- Condensed Matter Physics