Abstract
Phosphorus doping in Si1-x-yGexCy(0 ≤ x ≤ 0.78, 0 ≤ y ≤ 0.016) epitaxial growth on Si(100) at 550°C by ultraclean hot-wall low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH 3-H2 gas system is investigated. The relationship among the Ge, the C fraction, the P concentration (CP), the deposition rate, and the deposition conditions in the P-doped Si1-x-yGexCy epitaxial growth under the surface reaction-limited regime is experimentally obtained, and is explained by the modified Langmuir-type adsorption and reaction scheme. The relationships among the carrier concentration, the CP, and the resistivity in the P-doped Si1-x-yGexCy for various Ge and C fractions are also presented. The carrier concentration of the P-doped Si1-x-yGexCy with low Ge and C fractions ( x ≤ 0.48 and y ≤ 0.0046) is nearly equal to CP below approximately 2 × 1020 cm-3. With increasing Ge and C fractions, the film has electrically inactive P atoms independent of CP. The existence of C (y ≥ 0.0048), in the film reduces the Hall mobility.
Original language | English |
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Pages (from-to) | 2697-2700 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 40 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2001 Apr |
Externally published | Yes |
Keywords
- CHSiH
- Carrier concentration
- Chemical vapor deposition
- GeH
- PH
- Phosphorus doping
- Resistivity
- SiGeC
- SiH
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)