Phosphorus doping in Si1-x-yGexCy epitaxial growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH 3-H2 gas system

Doohwan Lee; Takaaki Noda; Hyunyoung Shim; Masao Sakuraba; Takashi Matsuura; Junichi Murota

doi:10.1143/jjap.40.2697

Phosphorus doping in Si_1-x-yGe_xC_y epitaxial growth by low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system

Doohwan Lee, Takaaki Noda, Hyunyoung Shim, Masao Sakuraba, Takashi Matsuura, Junichi Murota

Information Devices Division

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Phosphorus doping in Si_1-x-yGe_xC_y(0 ≤ x ≤ 0.78, 0 ≤ y ≤ 0.016) epitaxial growth on Si(100) at 550°C by ultraclean hot-wall low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system is investigated. The relationship among the Ge, the C fraction, the P concentration (C_P), the deposition rate, and the deposition conditions in the P-doped Si_1-x-yGe_xC_y epitaxial growth under the surface reaction-limited regime is experimentally obtained, and is explained by the modified Langmuir-type adsorption and reaction scheme. The relationships among the carrier concentration, the C_P, and the resistivity in the P-doped Si_1-x-yGe_xC_y for various Ge and C fractions are also presented. The carrier concentration of the P-doped Si_1-x-yGe_xC_y with low Ge and C fractions ( x ≤ 0.48 and y ≤ 0.0046) is nearly equal to C_P below approximately 2 × 10²⁰ cm^-3. With increasing Ge and C fractions, the film has electrically inactive P atoms independent of C_P. The existence of C (y ≥ 0.0048), in the film reduces the Hall mobility.

Original language	English
Pages (from-to)	2697-2700
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.40.2697
Publication status	Published - 2001 Apr

Keywords

CHSiH
Carrier concentration
Chemical vapor deposition
GeH
PH
Phosphorus doping
Resistivity
SiGeC
SiH

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Phosphorus doping in Si_1-x-yGe_xC_y epitaxial growth by low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system. / Lee, Doohwan; Noda, Takaaki; Shim, Hyunyoung; Sakuraba, Masao; Matsuura, Takashi; Murota, Junichi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 B, 04.2001, p. 2697-2700.

Research output: Contribution to journal › Article › peer-review

Lee, D, Noda, T, Shim, H, Sakuraba, M, Matsuura, T & Murota, J 2001, 'Phosphorus doping in Si_1-x-yGe_xC_y epitaxial growth by low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 4 B, pp. 2697-2700. https://doi.org/10.1143/jjap.40.2697

Lee, Doohwan ; Noda, Takaaki ; Shim, Hyunyoung ; Sakuraba, Masao ; Matsuura, Takashi ; Murota, Junichi. / Phosphorus doping in Si_1-x-yGe_xC_y epitaxial growth by low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 ; Vol. 40, No. 4 B. pp. 2697-2700.

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abstract = "Phosphorus doping in Si1-x-yGexCy(0 ≤ x ≤ 0.78, 0 ≤ y ≤ 0.016) epitaxial growth on Si(100) at 550°C by ultraclean hot-wall low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH 3-H2 gas system is investigated. The relationship among the Ge, the C fraction, the P concentration (CP), the deposition rate, and the deposition conditions in the P-doped Si1-x-yGexCy epitaxial growth under the surface reaction-limited regime is experimentally obtained, and is explained by the modified Langmuir-type adsorption and reaction scheme. The relationships among the carrier concentration, the CP, and the resistivity in the P-doped Si1-x-yGexCy for various Ge and C fractions are also presented. The carrier concentration of the P-doped Si1-x-yGexCy with low Ge and C fractions ( x ≤ 0.48 and y ≤ 0.0046) is nearly equal to CP below approximately 2 × 1020 cm-3. With increasing Ge and C fractions, the film has electrically inactive P atoms independent of CP. The existence of C (y ≥ 0.0048), in the film reduces the Hall mobility.",

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