Phosphorus doping in Si1-x-yGexCy epitaxial growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH 3-H2 gas system

Doohwan Lee; Takaaki Noda; Hyunyoung Shim; Masao Sakuraba; Takashi Matsuura; Junichi Murota

doi:10.1143/jjap.40.2697

Phosphorus doping in Si_1-x-yGe_xC_y epitaxial growth by low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system

Doohwan Lee, Takaaki Noda, Hyunyoung Shim, Masao Sakuraba, Takashi Matsuura, Junichi Murota

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Phosphorus doping in Si_1-x-yGe_xC_y(0 ≤ x ≤ 0.78, 0 ≤ y ≤ 0.016) epitaxial growth on Si(100) at 550°C by ultraclean hot-wall low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system is investigated. The relationship among the Ge, the C fraction, the P concentration (C_P), the deposition rate, and the deposition conditions in the P-doped Si_1-x-yGe_xC_y epitaxial growth under the surface reaction-limited regime is experimentally obtained, and is explained by the modified Langmuir-type adsorption and reaction scheme. The relationships among the carrier concentration, the C_P, and the resistivity in the P-doped Si_1-x-yGe_xC_y for various Ge and C fractions are also presented. The carrier concentration of the P-doped Si_1-x-yGe_xC_y with low Ge and C fractions ( x ≤ 0.48 and y ≤ 0.0046) is nearly equal to C_P below approximately 2 × 10²⁰ cm^-3. With increasing Ge and C fractions, the film has electrically inactive P atoms independent of C_P. The existence of C (y ≥ 0.0048), in the film reduces the Hall mobility.

Original language	English
Pages (from-to)	2697-2700
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.40.2697
Publication status	Published - 2001 Apr
Externally published	Yes

Keywords

CHSiH
Carrier concentration
Chemical vapor deposition
GeH
PH
Phosphorus doping
Resistivity
SiGeC
SiH

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.40.2697

Cite this

Phosphorus doping in Si_1-x-yGe_xC_y epitaxial growth by low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system. / Lee, Doohwan; Noda, Takaaki; Shim, Hyunyoung; Sakuraba, Masao; Matsuura, Takashi; Murota, Junichi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 B, 04.2001, p. 2697-2700.

Research output: Contribution to journal › Article › peer-review

Lee, D, Noda, T, Shim, H, Sakuraba, M, Matsuura, T & Murota, J 2001, 'Phosphorus doping in Si_1-x-yGe_xC_y epitaxial growth by low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 4 B, pp. 2697-2700. https://doi.org/10.1143/jjap.40.2697

Lee, Doohwan ; Noda, Takaaki ; Shim, Hyunyoung ; Sakuraba, Masao ; Matsuura, Takashi ; Murota, Junichi. / Phosphorus doping in Si_1-x-yGe_xC_y epitaxial growth by low-pressure chemical vapor deposition using a SiH₄-GeH₄-CH₃SiH₃-PH ₃-H₂ gas system. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 ; Vol. 40, No. 4 B. pp. 2697-2700.

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abstract = "Phosphorus doping in Si1-x-yGexCy(0 ≤ x ≤ 0.78, 0 ≤ y ≤ 0.016) epitaxial growth on Si(100) at 550°C by ultraclean hot-wall low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH 3-H2 gas system is investigated. The relationship among the Ge, the C fraction, the P concentration (CP), the deposition rate, and the deposition conditions in the P-doped Si1-x-yGexCy epitaxial growth under the surface reaction-limited regime is experimentally obtained, and is explained by the modified Langmuir-type adsorption and reaction scheme. The relationships among the carrier concentration, the CP, and the resistivity in the P-doped Si1-x-yGexCy for various Ge and C fractions are also presented. The carrier concentration of the P-doped Si1-x-yGexCy with low Ge and C fractions ( x ≤ 0.48 and y ≤ 0.0046) is nearly equal to CP below approximately 2 × 1020 cm-3. With increasing Ge and C fractions, the film has electrically inactive P atoms independent of CP. The existence of C (y ≥ 0.0048), in the film reduces the Hall mobility.",

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