Phosphorus doping in Si1-x-yGexCy epitaxial growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH 3-H2 gas system

Doohwan Lee, Takaaki Noda, Hyunyoung Shim, Masao Sakuraba, Takashi Matsuura, Junichi Murota

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Phosphorus doping in Si1-x-yGexCy(0 ≤ x ≤ 0.78, 0 ≤ y ≤ 0.016) epitaxial growth on Si(100) at 550°C by ultraclean hot-wall low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH 3-H2 gas system is investigated. The relationship among the Ge, the C fraction, the P concentration (CP), the deposition rate, and the deposition conditions in the P-doped Si1-x-yGexCy epitaxial growth under the surface reaction-limited regime is experimentally obtained, and is explained by the modified Langmuir-type adsorption and reaction scheme. The relationships among the carrier concentration, the CP, and the resistivity in the P-doped Si1-x-yGexCy for various Ge and C fractions are also presented. The carrier concentration of the P-doped Si1-x-yGexCy with low Ge and C fractions ( x ≤ 0.48 and y ≤ 0.0046) is nearly equal to CP below approximately 2 × 1020 cm-3. With increasing Ge and C fractions, the film has electrically inactive P atoms independent of CP. The existence of C (y ≥ 0.0048), in the film reduces the Hall mobility.

Original languageEnglish
Pages (from-to)2697-2700
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number4 B
DOIs
Publication statusPublished - 2001 Apr

Keywords

  • CHSiH
  • Carrier concentration
  • Chemical vapor deposition
  • GeH
  • PH
  • Phosphorus doping
  • Resistivity
  • SiGeC
  • SiH

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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