Phosphorus diffusion from doped Si1-xGex films into silicon

S. Kobayashi; M. Iizuka; T. Aoki; N. Mikoshiba; M. Sakuraba; T. Matsuura; Junichi Murota

Phosphorus diffusion from doped Si_1-xGe_x films into silicon

S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura, Junichi Murota

Information Devices Division

Research output: Contribution to journal › Conference article › peer-review

Abstract

Phosphorus diffusion from in-situ doped Si_1-xGe_x epitaxial films into Si at 800 °C was investigated using secondary ion mass spectroscopy and differential resistance measurements. The surface P concentration in the diffused layer in Si was higher than the P concentration in the Si_1-xGe_x film in the present conditions, which signifies the segregation of P from the Si_1-xGe_x film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si_1-xGe_x film, was about 2.5 in the case of the Si_0.75Ge_0.25 film as a diffusion source and increased with increasing Ge fraction. The P diffusion profiles in Si were normalized by x/√t, even though the segregation of P occurred. The high concentration diffusion characteristics of P in Si were similar to those reported by using conventional diffusion sources.

Original language	English
Pages (from-to)	265-269
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	568
Publication status	Published - 1999 Jan 1
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, USA Duration: 1999 Apr 5 → 1999 Apr 7

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{90c1910252004f9087be032156c50446,

title = "Phosphorus diffusion from doped Si1-xGex films into silicon",

abstract = "Phosphorus diffusion from in-situ doped Si1-xGex epitaxial films into Si at 800 °C was investigated using secondary ion mass spectroscopy and differential resistance measurements. The surface P concentration in the diffused layer in Si was higher than the P concentration in the Si1-xGex film in the present conditions, which signifies the segregation of P from the Si1-xGex film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si1-xGex film, was about 2.5 in the case of the Si0.75Ge0.25 film as a diffusion source and increased with increasing Ge fraction. The P diffusion profiles in Si were normalized by x/√t, even though the segregation of P occurred. The high concentration diffusion characteristics of P in Si were similar to those reported by using conventional diffusion sources.",

author = "S. Kobayashi and M. Iizuka and T. Aoki and N. Mikoshiba and M. Sakuraba and T. Matsuura and Junichi Murota",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "568",

pages = "265--269",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' ; Conference date: 05-04-1999 Through 07-04-1999",

}

TY - JOUR

T1 - Phosphorus diffusion from doped Si1-xGex films into silicon

AU - Kobayashi, S.

AU - Iizuka, M.

AU - Aoki, T.

AU - Mikoshiba, N.

AU - Sakuraba, M.

AU - Matsuura, T.

AU - Murota, Junichi

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Phosphorus diffusion from in-situ doped Si1-xGex epitaxial films into Si at 800 °C was investigated using secondary ion mass spectroscopy and differential resistance measurements. The surface P concentration in the diffused layer in Si was higher than the P concentration in the Si1-xGex film in the present conditions, which signifies the segregation of P from the Si1-xGex film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si1-xGex film, was about 2.5 in the case of the Si0.75Ge0.25 film as a diffusion source and increased with increasing Ge fraction. The P diffusion profiles in Si were normalized by x/√t, even though the segregation of P occurred. The high concentration diffusion characteristics of P in Si were similar to those reported by using conventional diffusion sources.

AB - Phosphorus diffusion from in-situ doped Si1-xGex epitaxial films into Si at 800 °C was investigated using secondary ion mass spectroscopy and differential resistance measurements. The surface P concentration in the diffused layer in Si was higher than the P concentration in the Si1-xGex film in the present conditions, which signifies the segregation of P from the Si1-xGex film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si1-xGex film, was about 2.5 in the case of the Si0.75Ge0.25 film as a diffusion source and increased with increasing Ge fraction. The P diffusion profiles in Si were normalized by x/√t, even though the segregation of P occurred. The high concentration diffusion characteristics of P in Si were similar to those reported by using conventional diffusion sources.

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M3 - Conference article

AN - SCOPUS:0032663594

VL - 568

SP - 265

EP - 269

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing'

Y2 - 5 April 1999 through 7 April 1999

ER -