@inproceedings{c6c833e29dbf40ab9b7da70e94f6ebc7,
title = "Phosphorus atomic layer doping in Si using PH3",
abstract = "Atomic layer doping of P (P-ALD) in Si is investigated using reduced pressure chemical vapor deposition (RPCVD). For P-ALD, PH3 exposure on Si (100) surface followed by Si cap layer deposition using SiH4 or Si2H6 is performed. P adsorption is suppressed by hydrogen-termination of the Si surface. On the hydrogen-free Si surface, the P adsorption is increasing with increasing PH3 exposure temperature saturating at temperatures above 600°C. P adsorption is also increasing with increasing PH3 exposure time. It tends to saturate at long exposure time indicating a self-limitation of the process. By Si deposition using Si 2H6, higher P peak concentration and higher P doping level in the Si cap layer is observed compared to those with SiH4 based Si deposition. For both SiH4 and Si2H6 based capping process lower P segregation is observed by lowering the growth temperature.",
author = "Yuji Yamamoto and Junichi Murota and Bernd Tillack",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3487631",
language = "English",
isbn = "9781566778251",
series = "ECS Transactions",
number = "6",
pages = "995--1002",
booktitle = "SiGe, Ge, and Related Compounds 4",
edition = "6",
note = "4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting ; Conference date: 10-10-2010 Through 15-10-2010",
}