Phosphorus atomic layer doping in Si using PH3

Yuji Yamamoto, Junichi Murota, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Atomic layer doping of P (P-ALD) in Si is investigated using reduced pressure chemical vapor deposition (RPCVD). For P-ALD, PH3 exposure on Si (100) surface followed by Si cap layer deposition using SiH4 or Si2H6 is performed. P adsorption is suppressed by hydrogen-termination of the Si surface. On the hydrogen-free Si surface, the P adsorption is increasing with increasing PH3 exposure temperature saturating at temperatures above 600°C. P adsorption is also increasing with increasing PH3 exposure time. It tends to saturate at long exposure time indicating a self-limitation of the process. By Si deposition using Si 2H6, higher P peak concentration and higher P doping level in the Si cap layer is observed compared to those with SiH4 based Si deposition. For both SiH4 and Si2H6 based capping process lower P segregation is observed by lowering the growth temperature.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages995-1002
Number of pages8
Edition6
DOIs
Publication statusPublished - 2010 Dec 1
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • Engineering(all)

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