Phosphorus atomic layer doping in Ge using RPCVD

Yuji Yamamoto, Rainer Kurps, Christian Mai, Ioan Costina, Junichi Murota, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

P atomic layer doping (P-ALD) of Ge is investigated at temperatures between 100°C and 300°C using a single wafer reduced pressure CVD system. Hydrogen-terminated and hydrogen-free Ge (100) surface are exposed to PH3 followed by Ge deposition at 300°C. P adsorption is suppressed by hydrogen-termination of Ge surface. On hydrogen-free Ge surface, incorporated P dose is increased with increasing PH3 exposure time and saturation behavior is observed. The saturation value of P by P-ALD at 300°C is 1.5e14 cm -2, which is close to a quarter of monolayer of Ge surface. The saturation value is not depending on PH3 partial pressure. The incorporated P dose is able to be described by Langmuir type kinetic. The electrical active P concentration of 6e19cm-3, which is 6 times higher active P concentration compared to solid solubility is obtained.

Original languageEnglish
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages16-17
Number of pages2
DOIs
Publication statusPublished - 2012 Jul 30
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: 2012 Jun 42012 Jun 6

Publication series

Name2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period12/6/412/6/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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