Phosphorescence of Ce-doped Gd3Al2Ga 3O12 crystals studied using luminescence spectroscopy

M. Kitaura, A. Sato, K. Kamada, A. Ohnishi, M. Sasaki

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Photoluminescence (PL) and thermally stimulated luminescence (TSL) properties of Ce-doped Gd3Al2Ga3O12 (Ce:GAGG) crystals have been studied in the temperature range of 10-300 K under electron excitation from the 4f level to the 5d levels of Ce3+ ions. PL and TSL spectra commonly exhibit a prominent band around 2.31 eV, due to electron transitions from the lowest 5d (5d1) level to the 4f levels. The intensity of the Ce3+ PL band is significantly changed with temperature under excitation from the lowest 4f level to a higher-lying 5d (5d2) level, whereas it is scarcely changed under excitation from the 4f level to the 5d1 level. Such change correlates well with the appearance of TSL glow peaks at 84 and 175 K. The luminescence properties are apparently influenced by the thermal behavior of electrons trapped at some lattice site, but not by nonradiative processes of electrons starting from the 5d1 level. The phosphorescence process will be discussed using a phenomenological model based on the results obtained.

Original languageEnglish
Article number083517
JournalJournal of Applied Physics
Volume115
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Phosphorescence of Ce-doped Gd<sub>3</sub>Al<sub>2</sub>Ga <sub>3</sub>O<sub>12</sub> crystals studied using luminescence spectroscopy'. Together they form a unique fingerprint.

Cite this