Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

Nobuhiko Mitoma; Bo Da; Hideki Yoshikawa; Toshihide Nabatame; Makoto Takahashi; Kazuhiro Ito; Takio Kizu; Akihiko Fujiwara; Kazuhito Tsukagoshi

doi:10.1063/1.4968810

Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

Nobuhiko Mitoma, Bo Da, Hideki Yoshikawa, Toshihide Nabatame, Makoto Takahashi, Kazuhiro Ito, Takio Kizu, Akihiko Fujiwara, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO₄ tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO₆ octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ∼0.2 eV.

Original language	English
Article number	221903
Journal	Applied Physics Letters
Volume	109
Issue number	22
DOIs	https://doi.org/10.1063/1.4968810
Publication status	Published - 2016 Nov 28
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4968810

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Mitoma, N., Da, B., Yoshikawa, H., Nabatame, T., Takahashi, M., Ito, K., Kizu, T., Fujiwara, A., & Tsukagoshi, K. (2016). Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films. Applied Physics Letters, 109(22), [221903]. https://doi.org/10.1063/1.4968810

Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films. / Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito.

In: Applied Physics Letters, Vol. 109, No. 22, 221903, 28.11.2016.

Research output: Contribution to journal › Article

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abstract = "The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ∼0.2 eV.",

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