Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

Nobuhiko Mitoma, Bo Da, Hideki Yoshikawa, Toshihide Nabatame, Makoto Takahashi, Kazuhiro Ito, Takio Kizu, Akihiko Fujiwara, Kazuhito Tsukagoshi

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Abstract

The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ∼0.2 eV.

Original languageEnglish
Article number221903
JournalApplied Physics Letters
Volume109
Issue number22
DOIs
Publication statusPublished - 2016 Nov 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Mitoma, N., Da, B., Yoshikawa, H., Nabatame, T., Takahashi, M., Ito, K., Kizu, T., Fujiwara, A., & Tsukagoshi, K. (2016). Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films. Applied Physics Letters, 109(22), [221903]. https://doi.org/10.1063/1.4968810