Phase transition of Graphitic-C3N4 under high pressure by in situ resistance measurement in a diamond anvil cell

Yong Hao Han, Ji Feng Luo, Chun Xiao Gao, Hong An Ma, Ai Min Hao, Yan Chun Li, Xiao Dong Li, Jing Liu, Ming Li, Hong Wu Liu, Guang Tian Zou

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11 Citations (Scopus)

Abstract

In situ resistance measurement of Graphitic-C3N4 has been performed under high pressure in a diamond anvil cell. The result reveals that there are changes of electron transport behaviour. As the pressure increases from ambient to 30GPa, three abnormal resistance changes can be found at room temperature and two are found at 77 K. The abnormal resistance dropped at 5 GPa is close to the phase transition pressure from the P6̄m2 structure to the p structure predicted by Lowther et al. [Phys. Rev. B 59 (1999) 11683] Another abnormal change of resistance at 12 GPa is related to the phase transition from g-C3N4 to cubic-C3N4 [Teter and Hemley, Science 271 (1996) 53].

Original languageEnglish
Pages (from-to)1347-1349
Number of pages3
JournalChinese Physics Letters
Volume22
Issue number6
DOIs
Publication statusPublished - 2005 Jun 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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