Simultaneous chalcogenization of CuIn(Sy,Se1-y)2 (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C2H5)2Se] and ditertiarybutylsulfide [(t-C4H9)2S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300°C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu11In9 metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications.
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Accepted/In press - 2017|
- Metalorganic source
ASJC Scopus subject areas
- Condensed Matter Physics