Phase transformation and capacitance enhancement of anodic zr O2 -Si O2

S. Koyama, Y. Aoki, N. Sakaguchi, S. Nagata, H. Habazaki

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5 Citations (Scopus)

Abstract

Capacitance enhancement of anodic oxide films on zirconium by adding silicon is reported here with correlation to the phase transformation of the oxide. The anodic oxide film formed on zirconium consists mainly of monoclinic Zr O2, which changes to tetragonal Zr O2 phase on the Zr- 5.5 atom % Si. Further increase in the silicon contents to 10 and 16 atom % results in the formation of amorphous oxide up to 30 V, above which two-layered films, comprising an outer crystalline tetragonal-phase oxide layer and an inner amorphous layer, are developed. The relative thickness of the outer crystalline layer to the total film thickness increases with formation voltage. The highest capacitance of the anodic oxide films is obtained on the Zr- 10 atom % Si. The changes in capacitance, permittivity and formation ratio of anodic oxide films with alloy composition are discussed with phase transformation and growth process of anodic oxides.

Original languageEnglish
Pages (from-to)C444-C451
JournalJournal of the Electrochemical Society
Volume157
Issue number12
DOIs
Publication statusPublished - 2010 Nov 24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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