Abstract
A phase sensitive photodiode is fabricated on a thin (380 nm) silicon layer with a subwavelength (670 nm period) grating. Optical absorption of the photodiode is enhanced by guided resonance of the grating to approximately 81% at the incident angle of 34.6° under TE polarization. Utilizing light beams impinging at the angles with enhanced sensitivities, a phase of two beams interfering in the silicon layer is precisely detected. The compact structure of the proposed detector can be used in several microinterferometers and integrated optics.
Original language | English |
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Article number | 241114 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2007 Jun 22 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)