Phase sensitive photodiode based on guided resonant absorption

Bong Seok Choi; Yoshiaki Kanamori; Kazuhiro Hane

doi:10.1063/1.2749180

Phase sensitive photodiode based on guided resonant absorption

Bong Seok Choi, Yoshiaki Kanamori, Kazuhiro Hane

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A phase sensitive photodiode is fabricated on a thin (380 nm) silicon layer with a subwavelength (670 nm period) grating. Optical absorption of the photodiode is enhanced by guided resonance of the grating to approximately 81% at the incident angle of 34.6° under TE polarization. Utilizing light beams impinging at the angles with enhanced sensitivities, a phase of two beams interfering in the silicon layer is precisely detected. The compact structure of the proposed detector can be used in several microinterferometers and integrated optics.

Original language	English
Article number	241114
Journal	Applied Physics Letters
Volume	90
Issue number	24
DOIs	https://doi.org/10.1063/1.2749180
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2749180

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title = "Phase sensitive photodiode based on guided resonant absorption",

abstract = "A phase sensitive photodiode is fabricated on a thin (380 nm) silicon layer with a subwavelength (670 nm period) grating. Optical absorption of the photodiode is enhanced by guided resonance of the grating to approximately 81% at the incident angle of 34.6° under TE polarization. Utilizing light beams impinging at the angles with enhanced sensitivities, a phase of two beams interfering in the silicon layer is precisely detected. The compact structure of the proposed detector can be used in several microinterferometers and integrated optics.",

author = "Choi, {Bong Seok} and Yoshiaki Kanamori and Kazuhiro Hane",

year = "2007",

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AU - Choi, Bong Seok

AU - Kanamori, Yoshiaki

AU - Hane, Kazuhiro

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AB - A phase sensitive photodiode is fabricated on a thin (380 nm) silicon layer with a subwavelength (670 nm period) grating. Optical absorption of the photodiode is enhanced by guided resonance of the grating to approximately 81% at the incident angle of 34.6° under TE polarization. Utilizing light beams impinging at the angles with enhanced sensitivities, a phase of two beams interfering in the silicon layer is precisely detected. The compact structure of the proposed detector can be used in several microinterferometers and integrated optics.

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Phase sensitive photodiode based on guided resonant absorption

Abstract

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