Phase formation and growth kinetics of an interface layer in Ni/SiC

Kenichiro Terui, Atsuko Sekiguchi, Hiroshi Yoshizaki, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The reaction behavior and growth kinetic of reaction layer were investigated in the Ni contact to n-type 6H-SiC. Annealing was performed at temperature in the range between 800 and 1000 °C for 1 to 240 minutes in Ar atmosphere. The interface reaction of Ni/SiC starts with Ni diffusion into SiC. Ni3Si is initially precipitated and subsequently forms the continuous layer of δ-Ni2Si. Kirkendall voids are formed at the reaction front. Carbon is segregated in the interface layer of nickel silicide. The growth rate of the interface layer follows a parabolic law, meaning that the growth rate is controlled by diffusion. The growth occurs in two steps at all examined temperatures: a fast growth is followed by a slow growth. In addition, in the late stage, the growth rate changes dramatically below and above 850°C. The observed growth kinetic can be explained by the difference of Ni diffusivity and the required concentration change for phase transition depending on the phase composition and structure. The δ-Ni2Si is formed in the early stage, while the ε-Ni3Si2 and θ-Ni2Si are formed in the late stage below and above 850°C, respectively.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages631-634
Number of pages4
ISBN (Print)9780878493579
Publication statusPublished - 2009 Jan 1
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: 2007 Oct 142007 Oct 19

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period07/10/1407/10/19

Keywords

  • Growth kinetic
  • Interface reaction
  • Nickel
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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