Phase-field simulation of antiphase boundary migration in intermetallic compounds with solute and vacancy segregation

Yuichiro Koizumi; Tatsuya Yokoi; Masayuki Ouchi; Yoritoshi Minamino; Yoshiya Masato; Samuel M. Allen

doi:10.1557/opl.2011.389

Phase-field simulation of antiphase boundary migration in intermetallic compounds with solute and vacancy segregation

Yuichiro Koizumi, Tatsuya Yokoi, Masayuki Ouchi, Yoritoshi Minamino, Yoshiya Masato, Samuel M. Allen

Materials Processing and Characterization Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The effects of solute and vacancy segregation on APB migration in Ti ₃Al, and their dependence on composition, have been investigated by using a phase-field simulation in which vacancy distribution is taken into account. Al-atoms are depleted and vacancies segregate at APB in stoichiometric Ti₃Al (Ti-25Al), whereas Al-atoms segregate and vacancies are depleted in Alrich one (Ti-28Al). The simulation indicates that APB in Ti ₃Al migrates much faster in Ti-25Al than in Ti-28Al with the effect of vacancy segregation whereas it migrates slightly faster in Ti28Al than in Ti-25Al in the absence of the effect of vacancy segregation.

Original language	English
Title of host publication	Intermetallic-Based Alloys for Structural and Functional Applications
Pages	437-442
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.389
Publication status	Published - 2011
Event	2010 MRS Fall Meeting - Boston, MA, United States Duration: 2010 Nov 29 → 2010 Dec 3

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1295
ISSN (Print)	0272-9172

Other

Other	2010 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	10/11/29 → 10/12/3

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Koizumi, Y., Yokoi, T., Ouchi, M., Minamino, Y., Masato, Y., & Allen, S. M. (2011). Phase-field simulation of antiphase boundary migration in intermetallic compounds with solute and vacancy segregation. In Intermetallic-Based Alloys for Structural and Functional Applications (pp. 437-442). (Materials Research Society Symposium Proceedings; Vol. 1295). https://doi.org/10.1557/opl.2011.389

Phase-field simulation of antiphase boundary migration in intermetallic compounds with solute and vacancy segregation. / Koizumi, Yuichiro; Yokoi, Tatsuya; Ouchi, Masayuki; Minamino, Yoritoshi; Masato, Yoshiya; Allen, Samuel M.

Intermetallic-Based Alloys for Structural and Functional Applications. 2011. p. 437-442 (Materials Research Society Symposium Proceedings; Vol. 1295).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koizumi, Y, Yokoi, T, Ouchi, M, Minamino, Y, Masato, Y & Allen, SM 2011, Phase-field simulation of antiphase boundary migration in intermetallic compounds with solute and vacancy segregation. in Intermetallic-Based Alloys for Structural and Functional Applications. Materials Research Society Symposium Proceedings, vol. 1295, pp. 437-442, 2010 MRS Fall Meeting, Boston, MA, United States, 10/11/29. https://doi.org/10.1557/opl.2011.389

Koizumi, Yuichiro ; Yokoi, Tatsuya ; Ouchi, Masayuki ; Minamino, Yoritoshi ; Masato, Yoshiya ; Allen, Samuel M. / Phase-field simulation of antiphase boundary migration in intermetallic compounds with solute and vacancy segregation. Intermetallic-Based Alloys for Structural and Functional Applications. 2011. pp. 437-442 (Materials Research Society Symposium Proceedings).

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title = "Phase-field simulation of antiphase boundary migration in intermetallic compounds with solute and vacancy segregation",

abstract = "The effects of solute and vacancy segregation on APB migration in Ti 3Al, and their dependence on composition, have been investigated by using a phase-field simulation in which vacancy distribution is taken into account. Al-atoms are depleted and vacancies segregate at APB in stoichiometric Ti3Al (Ti-25Al), whereas Al-atoms segregate and vacancies are depleted in Alrich one (Ti-28Al). The simulation indicates that APB in Ti 3Al migrates much faster in Ti-25Al than in Ti-28Al with the effect of vacancy segregation whereas it migrates slightly faster in Ti28Al than in Ti-25Al in the absence of the effect of vacancy segregation.",

author = "Yuichiro Koizumi and Tatsuya Yokoi and Masayuki Ouchi and Yoritoshi Minamino and Yoshiya Masato and Allen, {Samuel M.}",

note = "Funding Information: This study was supported by the ISIJ Research Promotion Grant from of Iron and Steel Institute of Japan and the Iketani Science and Technology Foundation.; 2010 MRS Fall Meeting ; Conference date: 29-11-2010 Through 03-12-2010",

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AU - Ouchi, Masayuki

AU - Minamino, Yoritoshi

AU - Masato, Yoshiya

AU - Allen, Samuel M.

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N2 - The effects of solute and vacancy segregation on APB migration in Ti 3Al, and their dependence on composition, have been investigated by using a phase-field simulation in which vacancy distribution is taken into account. Al-atoms are depleted and vacancies segregate at APB in stoichiometric Ti3Al (Ti-25Al), whereas Al-atoms segregate and vacancies are depleted in Alrich one (Ti-28Al). The simulation indicates that APB in Ti 3Al migrates much faster in Ti-25Al than in Ti-28Al with the effect of vacancy segregation whereas it migrates slightly faster in Ti28Al than in Ti-25Al in the absence of the effect of vacancy segregation.

AB - The effects of solute and vacancy segregation on APB migration in Ti 3Al, and their dependence on composition, have been investigated by using a phase-field simulation in which vacancy distribution is taken into account. Al-atoms are depleted and vacancies segregate at APB in stoichiometric Ti3Al (Ti-25Al), whereas Al-atoms segregate and vacancies are depleted in Alrich one (Ti-28Al). The simulation indicates that APB in Ti 3Al migrates much faster in Ti-25Al than in Ti-28Al with the effect of vacancy segregation whereas it migrates slightly faster in Ti28Al than in Ti-25Al in the absence of the effect of vacancy segregation.

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