Phase-change nanodot material for an optical memory

Noboru Yamada, Rie Kojima, Kazuya Hisada, Takashi Mihara, Akio Tsuchino, Norihito Fujinoki, Masahiro Birukawa, Toshiyuki Matsunaga, Nobuhiro Yasuda, Yoshimitsu Fukuyama, Kiminori Ito, Yoshihito Tanaka, Shigeru Kimura, Masaki Takata

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


A sputtered phase-change material, Ge10Sb90, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15-20 ns when a NiCr layer is provided to control the heating-cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase-change material could be a possible candidate for next-generation "green" optical storage.

Original languageEnglish
Pages (from-to)820-826
Number of pages7
JournalAdvanced Optical Materials
Issue number11
Publication statusPublished - 2013 Nov
Externally publishedYes


  • Amorphous alloys
  • Crystallization
  • Nanodots
  • Optical storage
  • Phase changes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


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