Phase-change nanodot material for an optical memory

Noboru Yamada; Rie Kojima; Kazuya Hisada; Takashi Mihara; Akio Tsuchino; Norihito Fujinoki; Masahiro Birukawa; Toshiyuki Matsunaga; Nobuhiro Yasuda; Yoshimitsu Fukuyama; Kiminori Ito; Yoshihito Tanaka; Shigeru Kimura; Masaki Takata

doi:10.1002/adom.201300201

Phase-change nanodot material for an optical memory

Noboru Yamada, Rie Kojima, Kazuya Hisada, Takashi Mihara, Akio Tsuchino, Norihito Fujinoki, Masahiro Birukawa, Toshiyuki Matsunaga, Nobuhiro Yasuda, Yoshimitsu Fukuyama, Kiminori Ito, Yoshihito Tanaka, Shigeru Kimura, Masaki Takata

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A sputtered phase-change material, Ge₁₀Sb₉₀, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15-20 ns when a NiCr layer is provided to control the heating-cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase-change material could be a possible candidate for next-generation "green" optical storage.

Original language	English
Pages (from-to)	820-826
Number of pages	7
Journal	Advanced Optical Materials
Volume	1
Issue number	11
DOIs	https://doi.org/10.1002/adom.201300201
Publication status	Published - 2013 Nov
Externally published	Yes

Keywords

Amorphous alloys
Crystallization
Nanodots
Optical storage
Phase changes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1002/adom.201300201

Cite this

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title = "Phase-change nanodot material for an optical memory",

abstract = "A sputtered phase-change material, Ge10Sb90, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15-20 ns when a NiCr layer is provided to control the heating-cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase-change material could be a possible candidate for next-generation {"}green{"} optical storage.",

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year = "2013",

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T1 - Phase-change nanodot material for an optical memory

AU - Yamada, Noboru

AU - Kojima, Rie

AU - Hisada, Kazuya

AU - Mihara, Takashi

AU - Tsuchino, Akio

AU - Fujinoki, Norihito

AU - Birukawa, Masahiro

AU - Matsunaga, Toshiyuki

AU - Yasuda, Nobuhiro

AU - Fukuyama, Yoshimitsu

AU - Ito, Kiminori

AU - Tanaka, Yoshihito

AU - Kimura, Shigeru

AU - Takata, Masaki

PY - 2013/11

Y1 - 2013/11

N2 - A sputtered phase-change material, Ge10Sb90, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15-20 ns when a NiCr layer is provided to control the heating-cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase-change material could be a possible candidate for next-generation "green" optical storage.

AB - A sputtered phase-change material, Ge10Sb90, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15-20 ns when a NiCr layer is provided to control the heating-cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase-change material could be a possible candidate for next-generation "green" optical storage.

KW - Amorphous alloys

KW - Crystallization

KW - Nanodots

KW - Optical storage

KW - Phase changes

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SN - 2195-1071

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Phase-change nanodot material for an optical memory

Abstract

Keywords

ASJC Scopus subject areas

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