TY - JOUR
T1 - Phase-change nanodot material for an optical memory
AU - Yamada, Noboru
AU - Kojima, Rie
AU - Hisada, Kazuya
AU - Mihara, Takashi
AU - Tsuchino, Akio
AU - Fujinoki, Norihito
AU - Birukawa, Masahiro
AU - Matsunaga, Toshiyuki
AU - Yasuda, Nobuhiro
AU - Fukuyama, Yoshimitsu
AU - Ito, Kiminori
AU - Tanaka, Yoshihito
AU - Kimura, Shigeru
AU - Takata, Masaki
PY - 2013/11
Y1 - 2013/11
N2 - A sputtered phase-change material, Ge10Sb90, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15-20 ns when a NiCr layer is provided to control the heating-cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase-change material could be a possible candidate for next-generation "green" optical storage.
AB - A sputtered phase-change material, Ge10Sb90, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15-20 ns when a NiCr layer is provided to control the heating-cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase-change material could be a possible candidate for next-generation "green" optical storage.
KW - Amorphous alloys
KW - Crystallization
KW - Nanodots
KW - Optical storage
KW - Phase changes
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U2 - 10.1002/adom.201300201
DO - 10.1002/adom.201300201
M3 - Article
AN - SCOPUS:84888045843
VL - 1
SP - 820
EP - 826
JO - Advanced Optical Materials
JF - Advanced Optical Materials
SN - 2195-1071
IS - 11
ER -