Abstract
The photoluminescence spectrum of modulation-doped GaAsGa1-xAlxAs quantum wells is investigated by perturbation theory. Many-body and impurity scattering effects are considered separately and a comparison with recent experiments is carried out. Characteristic effects of a strong magnetic field on the luminescence line shape are predicted.
Original language | English |
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Pages (from-to) | 629-634 |
Number of pages | 6 |
Journal | Surface Science |
Volume | 170 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1986 Apr 3 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry