Persistent tris(t-butyldimethylsilyl)silyl radical and its new generation methods

Mitsuo Kira, Takeshi Obata, Itaru Kon, Hisako Hashimoto, Masaaki Ichinohe, Haruaki Sakurai, Soichiro Kyushin, Hideyuki Matsumoto

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

A persistent silyl radical, tris(t-butyldimethylsilyl)silyl radical, (t-BuMe2Si)3Si· (1), was produced by two new methods in addition to a conventional hydrogen abstraction from the corresponding hydrosilane: one-electron oxidation of (t-BuMe2Si)3SiNa (2) by NO+BF4- and one-electron reduction of (t-BuMe2Si)3SiBr (3) by sodium.

Original languageEnglish
Pages (from-to)1097-1098
Number of pages2
JournalChemistry Letters
Issue number11
DOIs
Publication statusPublished - 1998 Jan 1

ASJC Scopus subject areas

  • Chemistry(all)

Fingerprint Dive into the research topics of 'Persistent tris(t-butyldimethylsilyl)silyl radical and its new generation methods'. Together they form a unique fingerprint.

Cite this