Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH 3) 3Ga/AsH 3

Yutaka Oyama; Fumio Matsumoto; Hiroshi Watanabe; Ken Suto; Jun Ichi Nishizawa

doi:10.1149/1.1397320

Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH ₃) ₃Ga/AsH ₃

Yutaka Oyama, Fumio Matsumoto, Hiroshi Watanabe, Ken Suto, Jun Ichi Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers.

Original language	English
Pages (from-to)	G559-G562
Journal	Journal of the Electrochemical Society
Volume	148
Issue number	10
DOIs	https://doi.org/10.1149/1.1397320
Publication status	Published - 2001 Oct

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1397320

Cite this

Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH ₃) ₃Ga/AsH ₃ . / Oyama, Yutaka; Matsumoto, Fumio; Watanabe, Hiroshi; Suto, Ken; Nishizawa, Jun Ichi.

In: Journal of the Electrochemical Society, Vol. 148, No. 10, 10.2001, p. G559-G562.

Research output: Contribution to journal › Article › peer-review

@article{cfbdc96bc23f48cfa1b1cada51c4876b,

title = "Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH 3) 3Ga/AsH 3 ",

abstract = "The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers.",

author = "Yutaka Oyama and Fumio Matsumoto and Hiroshi Watanabe and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2001",

month = oct,

doi = "10.1149/1.1397320",

language = "English",

volume = "148",

pages = "G559--G562",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "10",

}

TY - JOUR

T1 - Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH 3) 3Ga/AsH 3

AU - Oyama, Yutaka

AU - Matsumoto, Fumio

AU - Watanabe, Hiroshi

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2001/10

Y1 - 2001/10

N2 - The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers.

AB - The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers.

UR - http://www.scopus.com/inward/record.url?scp=0442292384&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0442292384&partnerID=8YFLogxK

U2 - 10.1149/1.1397320

DO - 10.1149/1.1397320

M3 - Article

AN - SCOPUS:0442292384

VL - 148

SP - G559-G562

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 10

ER -