Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH 3) 3Ga/AsH 3

Yutaka Oyama, Fumio Matsumoto, Hiroshi Watanabe, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

Abstract

The persistent photoconductivity (PPC) of undoped low temperature (LT) grown GaAs has been investigated by temperature-dependent resistance measurements. The PPC phenomenon has been observed under atmospheric pressure in uniformly doped n-GaAs for the first time. It is shown that the recovery temperature is 230 K, and four distinct peaks appear in the PPC spectrum. From the results of secondary ion mass spectroscopy and X-ray multicrystal diffractometry analysis, it is considered that the LT-GaAs layers contain arsenic precipitates or related defects, and that the PPC phenomenon is associated with excess arsenic-related defects in the layers.

Original languageEnglish
Pages (from-to)G559-G562
JournalJournal of the Electrochemical Society
Volume148
Issue number10
DOIs
Publication statusPublished - 2001 Oct 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH <sub>3</sub>) <sub>3</sub>Ga/AsH <sub>3</sub>'. Together they form a unique fingerprint.

Cite this