Persistent photoconductivity of low temperature grown AlGaAs prepared by intermittent injection of (CH3)3Al/(CH3)3Ga/AsH3

Yutaka Oyama; Hiroshi Watanabe; Fumio Matsumoto; Jun Ichi Nishizawa; Ken Suto

doi:10.1149/1.1393534

Persistent photoconductivity of low temperature grown AlGaAs prepared by intermittent injection of (CH₃)₃Al/(CH₃)₃Ga/AsH₃

Yutaka Oyama, Hiroshi Watanabe, Fumio Matsumoto, Jun Ichi Nishizawa, Ken Suto

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

The persistent photoconductivity (PPC) of undoped low temperature grown n-AlGaAs has been investigated by temperature-dependent resistance measurements. Five distinct peaks were observed in the resistance measurement results during recovery of the PPC, and the PPC remained up to 260 K. In a sample with a low donor concentration of 10¹⁵ cm^-3, a new current-dependent PPC also was observed at around 25 K.

Original language	English
Pages (from-to)	2347-2349
Number of pages	3
Journal	Journal of the Electrochemical Society
Volume	147
Issue number	6
DOIs	https://doi.org/10.1149/1.1393534
Publication status	Published - 2000 Jun 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1393534

Cite this

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abstract = "The persistent photoconductivity (PPC) of undoped low temperature grown n-AlGaAs has been investigated by temperature-dependent resistance measurements. Five distinct peaks were observed in the resistance measurement results during recovery of the PPC, and the PPC remained up to 260 K. In a sample with a low donor concentration of 1015 cm-3, a new current-dependent PPC also was observed at around 25 K.",

author = "Yutaka Oyama and Hiroshi Watanabe and Fumio Matsumoto and Nishizawa, {Jun Ichi} and Ken Suto",

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T1 - Persistent photoconductivity of low temperature grown AlGaAs prepared by intermittent injection of (CH3)3Al/(CH3)3Ga/AsH3

AU - Oyama, Yutaka

AU - Watanabe, Hiroshi

AU - Matsumoto, Fumio

AU - Nishizawa, Jun Ichi

AU - Suto, Ken

PY - 2000/6/1

Y1 - 2000/6/1

N2 - The persistent photoconductivity (PPC) of undoped low temperature grown n-AlGaAs has been investigated by temperature-dependent resistance measurements. Five distinct peaks were observed in the resistance measurement results during recovery of the PPC, and the PPC remained up to 260 K. In a sample with a low donor concentration of 1015 cm-3, a new current-dependent PPC also was observed at around 25 K.

AB - The persistent photoconductivity (PPC) of undoped low temperature grown n-AlGaAs has been investigated by temperature-dependent resistance measurements. Five distinct peaks were observed in the resistance measurement results during recovery of the PPC, and the PPC remained up to 260 K. In a sample with a low donor concentration of 1015 cm-3, a new current-dependent PPC also was observed at around 25 K.

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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