Abstract
The persistent photoconductivity (PPC) of undoped low temperature grown n-AlGaAs has been investigated by temperature-dependent resistance measurements. Five distinct peaks were observed in the resistance measurement results during recovery of the PPC, and the PPC remained up to 260 K. In a sample with a low donor concentration of 1015 cm-3, a new current-dependent PPC also was observed at around 25 K.
| Original language | English |
|---|---|
| Pages (from-to) | 2347-2349 |
| Number of pages | 3 |
| Journal | Journal of the Electrochemical Society |
| Volume | 147 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2000 Jun 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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Cite this
Oyama, Y., Watanabe, H., Matsumoto, F., Nishizawa, J. I., & Suto, K. (2000). Persistent photoconductivity of low temperature grown AlGaAs prepared by intermittent injection of (CH3)3Al/(CH3)3Ga/AsH3. Journal of the Electrochemical Society, 147(6), 2347-2349. https://doi.org/10.1149/1.1393534