Perpendicular Magnetic Tunnel Junctions with Low Resistance-Area Product: High Output Voltage and Bias Dependence of Magnetoresistance

N. Tezuka, S. Oikawa, I. Abe, M. Matsuura, S. Sugimoto, K. Nishimura, T. Seino

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We investigate the tunnel magnetoresistance (TMR) effect and its applied bias voltage dependence for perpendicular magnetic tunnel junctions (p-MTJs) with low resistance-area (RA) products of about 10 Ω μm2. We obtain a maximum TMR ratio of 248% among the examined devices. The bias-voltage dependence of the TMR ratio for these junctions is almost the same as that for junctions with RA products of about 10-1000 Ω μ m2 in the positive voltage region, while a fast drop in the TMR ratio is observed in the negative bias region. An output voltage of more than 200 mV is obtained for these p-MTJs.

Original languageEnglish
Article number7498675
JournalIEEE Magnetics Letters
Volume7
DOIs
Publication statusPublished - 2016

Keywords

  • Spin electronics
  • magnetic random access memory
  • magnetic tunnel junctions
  • magnetoresistive devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Perpendicular Magnetic Tunnel Junctions with Low Resistance-Area Product: High Output Voltage and Bias Dependence of Magnetoresistance'. Together they form a unique fingerprint.

Cite this