Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

H. Sato; M. Yamanouchi; S. Ikeda; S. Fukami; F. Matsukura; H. Ohno

doi:10.1063/1.4736727

Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

Research output: Contribution to journal › Review article › peer-review

193 Citations (Scopus)

Abstract

We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nm was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

Original language	English
Article number	022414
Journal	Applied Physics Letters
Volume	101
Issue number	2
DOIs	https://doi.org/10.1063/1.4736727
Publication status	Published - 2012 Jul 9

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure",

abstract = "We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nm was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.",

author = "H. Sato and M. Yamanouchi and S. Ikeda and S. Fukami and F. Matsukura and H. Ohno",

note = "Funding Information: The work was supported by the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST program) of Japan Society for Promotion of Science (JSPS). The authors wish to thank I. Morita, T. Hirata, and H. Iwanuma for technical support in MTJ fabrication.",

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T1 - Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

AU - Sato, H.

AU - Yamanouchi, M.

AU - Ikeda, S.

AU - Fukami, S.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The work was supported by the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST program) of Japan Society for Promotion of Science (JSPS). The authors wish to thank I. Morita, T. Hirata, and H. Iwanuma for technical support in MTJ fabrication.

PY - 2012/7/9

Y1 - 2012/7/9

N2 - We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nm was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

AB - We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nm was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

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Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

Abstract

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