Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno

Research output: Contribution to journalReview articlepeer-review

193 Citations (Scopus)

Abstract

We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nm was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

Original languageEnglish
Article number022414
JournalApplied Physics Letters
Volume101
Issue number2
DOIs
Publication statusPublished - 2012 Jul 9

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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