Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm

S. Ikeda, H. Sato, H. Honjo, E. C.I. Enobio, S. Ishikawa, M. Yamanouchi, S. Fukami, S. Kanai, F. Matsukura, T. Endoh, H. Ohno

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)


CoFeB-MgO based magnetic tunnel junction with perpendicular easy axis (p-MTJ) shows a high potential to be used in spintronics based very large scale integrated circuits and spin-transfer-torque magnetorestive random access memories. In this paper, we review development of p-MTJ using single CoFeB-MgO and double CoFeB-MgO interface structures. The TMR ratio shows 164% after annealing at 400 °C, indicating the CoFeB-MgO p-MTJs have capability for back-end-of-line. Scaling properties of p-MTJs using double CoFeB-MgO interface structure are also reviewed.

Original languageEnglish
Article number7047160
Pages (from-to)33.2.1-33.2.4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Issue numberFebruary
Publication statusPublished - 2015 Feb 20
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 2014 Dec 152014 Dec 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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